mt9htf12872pky Micron Semiconductor Products, mt9htf12872pky Datasheet

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mt9htf12872pky

Manufacturer Part Number
mt9htf12872pky
Description
Ddr2 Sdram Mini-rdimm
Manufacturer
Micron Semiconductor Products
Datasheet
DDR2 SDRAM Mini-RDIMM
MT9HTF6472PKY – 512MB
MT9HTF12872PKY – 1GB
Features
• 244-pin, mini registered dual in-line memory
• Fast data transfer rates: PC2-6400, PC2-5300,
• 512MB (64 Meg x 72) or 1GB (128 Meg x 72)
• Supports ECC error detection and correction
• Single rank
• V
• V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• DLL to align DQ and DQS transitions with CK
• Multiple internal device banks for concurrent
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1
• Programmable burst lengths: 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Serial presence-detect (SPD) with EEPROM
• Gold edge contacts
• Lead-free
Table 1: Key Timing Parameters
PDF: 09005aef817ab1fc
htf9c64_128x72pky.pdf - Rev. E 3/10 EN
module
PC2-4200, or PC2-3200
operation
Speed
Grade
DD
DDSPD
-80E
-800
-667
-53E
-40E
= V
DDQ
= 1.7–3.6V
= 1.8V
Products and specifications discussed herein are subject to change by Micron without notice.
Nomenclature
Industry
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
t
CK
CL = 6
800
800
512MB, 1GB (x72, SR) 244-Pin DDR2 Mini-RDIMM
CL = 5
Data Rate (MT/s)
800
667
667
1
Figure 1: 244-Pin Mini-RDIMM (MO-244 R/C A)
CL = 4
Module height: 30mm (1.18in)
Options
• Parity
• Operating temperature
• Package
• Frequency/CL
533
533
553
553
400
Notes:
– Commercial (0°C ≤ T
– Industrial (-40°C ≤ T
– 244-pin DIMM (lead-free)
– 2.5ns @ CL = 5 (DDR2-800)
– 2.5ns @ CL = 6 (DDR2-800)
– 3.0ns @ CL = 5 (DDR2-667)
– 3.75ns @ CL = 4 (DDR2-533)
– 5.0ns @ CL = 3 (DDR2-400)
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1. Contact Micron for industrial temperature
2. CL = CAS (READ) latency; registered mode
3. Not recommended for future designs.
CL = 3
400
400
400
400
400
module offerings.
will add one clock cycle to CL.
2
t
(ns)
12.5
RCD
15
15
15
15
A
A
≤ +85°C)
≤ +70°C)
© 2005 Micron Technology, Inc. All rights reserved.
3
1
(ns)
12.5
t
15
15
15
15
RP
Marking
Features
None
-80E
-53E
-40E
-800
-667
P
Y
I
(ns)
t
55
55
55
55
55
RC

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mt9htf12872pky Summary of contents

Page 1

... DDR2 SDRAM Mini-RDIMM MT9HTF6472PKY – 512MB MT9HTF12872PKY – 1GB Features • 244-pin, mini registered dual in-line memory module • Fast data transfer rates: PC2-6400, PC2-5300, PC2-4200, or PC2-3200 • 512MB (64 Meg x 72) or 1GB (128 Meg x 72) • Supports ECC error detection and correction • ...

Page 2

... Table 2: Addressing Refresh count Row addressing Device bank addressing Device configuration Column addressing Module rank addressing Table 3: Part Numbers and Timing Parameters – 512MB 1 Base device: MT47H64M8, 512Mb DDR2 SDRAM Module 2 Part Number Density MT9HTF6472PK(I)Y-80E__ 512MB MT9HTF6472PK(I)Y-800__ 512MB MT9HTF6472PK(I)Y-667__ ...

Page 3

Pin Assignments Table 5: Pin Assignments 244-Pin MiniDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol REF DQ24 DQ0 34 DQ25 65 4 DQ1 ...

Page 4

Table 5: Pin Assignments (Continued) 244-Pin MiniDIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol DQ18 DQ19 Pin for 512MB, ...

Page 5

... Pin Descriptions The pin description table below is a comprehensive list of all possible pins for all DDR2 modules. All pins listed may not be supported on this module. See Pin Assignments for information specific to this module. Table 6: Pin Descriptions Symbol Type Ax Input BAx Input ...

Page 6

... SPD EEPROM power supply: 1.7–3.6V. Reference voltage: V /2. DD Ground. No connect: These pins are not connected on the module. No function: These pins are connected within the module, but provide no functionality. Not used: These pins are not used in specific module configurations/operations. Reserved for future use. 6 Pin Descriptions and V ...

Page 7

Functional Block Diagram Figure 2: Functional Block Diagram RS0# DQS0 DQS0# DM0/DQS9 NF/DQS9# DM/ NF/ CS# DQS DQS# RDQS RDQS# DQ0 DQ DQ1 DQ DQ2 DQ U1 DQ3 DQ DQ4 DQ DQ5 DQ DQ6 DQ DQ7 DQ DQS1 DQS1# DM1/DQS10 ...

Page 8

... DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data trans- fers at the I/O pins. DDR2 modules use two sets of differential signals: DQS, DQS# to capture data and CK and CK# to capture commands, addresses, and control signals. Differential clocks and data strobes ensure exceptional noise immunity for these signals and provide precise crossing points to capture input signals ...

Page 9

... Electrical Specifications Stresses greater than those listed may cause permanent damage to the DRAM devices on the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated in each device’s data sheet is not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability ...

Page 10

... Component specifications are available on Micron's Web site. Module speed grades cor- relate with component speed grades. Table 8: Module and Component Speed Grades DDR2 components may exceed the listed module speed grades; module may not be available in all listed speed grades Module Speed Grade -1GA ...

Page 11

I Specifications DD Table 9: I Specifications and Conditions – 512MB DD Values are for the MT47H64M8 DDR2 SDRAM components only, and are computed from values specified in the 512Mb (64 Meg x 8) component data sheet Parameter/Condition Operating one ...

Page 12

Table 9: I Specifications and Conditions – 512MB (Continued) DD Values are for the MT47H64M8 DDR2 SDRAM components only, and are computed from values specified in the 512Mb (64 Meg x 8) component data sheet Parameter/Condition Self refresh current; CK ...

Page 13

Table 10: I Specifications and Conditions – 1GB DD Values are for the MT47H128M8 DDR2 SDRAM components only, and are computed from values specified in the 1Gb (128 Meg x 8) component data sheet Parameter/Condition Operating one bank active-precharge current; ...

Page 14

Table 10: I Specifications and Conditions – 1GB (Continued) DD Values are for the MT47H128M8 DDR2 SDRAM components only, and are computed from values specified in the 1Gb (128 Meg x 8) component data sheet Parameter/Condition Operating bank interleave read ...

Page 15

... RESET 1.8V DD RESET tion of the DDR2 SDRAM RDIMMs. These are meant subset of the parameters for the specific device used on the module. Detailed information for this register is available in JEDEC standard JESD82. 15 Register and PLL Specifications Min V + 125 V REF(DC) DDQ ...

Page 16

Table 12: PLL Specifications CU877 device or equivalent Parameter Symbol DC high-level V IH input voltage DC low-level V IL input voltage Input voltage (limits high-level V IH input voltage DC low-level V IL input voltage Input ...

Page 17

Serial Presence-Detect For the latest SPD data, refer to Micron's SPD page: www.micron.com/SPD. Table 14: SPD EEPROM Operating Conditions Parameter/Condition Supply voltage Input high voltage: logic 1; All inputs Input low voltage: logic 0; All inputs Output low voltage: I ...

Page 18

... TYP Back view U10 U9 U12 U11 3.6 (0.142) TYP 38.4 (1.512) TYP design dimensions. times occur. 18 Module Dimensions 30.152 (1.187) U6 29.848 (1.175) 20.0 (0.787) TYP 10.0 (0.394) TYP Pin 122 U13 Pin 123 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2005 Micron Technology, Inc. All rights reserved. ...

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