mt9htf12872pky Micron Semiconductor Products, mt9htf12872pky Datasheet - Page 12
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mt9htf12872pky
Manufacturer Part Number
mt9htf12872pky
Description
Ddr2 Sdram Mini-rdimm
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT9HTF12872PKY.pdf
(18 pages)
Table 9: I
Values are for the MT47H64M8 DDR2 SDRAM components only, and are computed from values specified in the 512Mb (64
Meg x 8) component data sheet
PDF: 09005aef817ab1fc
htf9c64_128x72pky.pdf - Rev. E 3/10 EN
Parameter/Condition
Self refresh current; CK and CK# at 0V; CKE ≤ 0.2V; Other control
and address bus inputs are floating; Data bus inputs are floating
Operating bank interleave read current; All device banks inter-
leaving reads, I
t
t
bus inputs are stable during deselects; Data bus inputs are switching;
See I
CK (I
RCD (I
DD7
DD
DD
);
Conditions for detail
); CKE is HIGH, S# is HIGH between valid commands; Address
t
CK =
DD
Specifications and Conditions – 512MB (Continued)
OUT
t
CK (I
= 0mA; BL = 4, CL = CL (I
DD
),
t
RC =
t
RC (I
DD
),
t
RRD =
DD
), AL =
t
RRD (I
512MB, 1GB (x72, SR) 244-Pin DDR2 Mini-RDIMM
t
RCD (I
DD
),
t
RCD =
DD
12
) - 1 ×
Micron Technology, Inc. reserves the right to change products or specifications without notice.
Symbol
I
I
DD6
DD7
-80E
-800
2700
63
-667
2160
63
© 2005 Micron Technology, Inc. All rights reserved.
I
DD
-53E
2025
63
Specifications
-40E
1980
63
Units
mA
mA