k9f1g08u0m-y Samsung Semiconductor, Inc., k9f1g08u0m-y Datasheet - Page 20

• Manufacturer Part Number: k9f1g08u0m-y
• Description: 128m X 8 Bit / 64m X 16 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9F1G08Q0M
K9F1G08D0M
K9F1G08U0M K9F1G16U0M
Input Data Latch Cycle
Serial Access Cycle after Read
I/Ox
ALE
CLE
CE
WE
CE
RE
R/B
I/Ox
K9F1G16Q0M
K9F1G16D0M
t
ALS
NOTES : Transition is measured 200mV from steady state voltage with load.
t
t
RR
REA
t
t
WP
CEA
t
This parameter is sampled and not 100% tested.
DS
DIN 0
t
WC
(CLE=L, WE=H, ALE=L)
t
DH
t
t
RP
NOTES : DIN final means 2112(X8) or 1056(X16)
WH
Dout
t
RC
t
REH
t
WP
t
DS
DIN 1
t
REA
20
t
DH
Dout
t
RHZ*
t
DIN final*
WP
t
DS
t
DH
t
CH
t
t
CLH
REA
FLASH MEMORY
Dout
t
t
RHZ*
OH
t
t
OH
CHZ*