k9f1g08u0m-y Samsung Semiconductor, Inc., k9f1g08u0m-y Datasheet - Page 40

• Manufacturer Part Number: k9f1g08u0m-y
• Description: 128m X 8 Bit / 64m X 16 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

K9F1G08Q0M
K9F1G08D0M
K9F1G08U0M K9F1G16U0M
Data Protection & Power up sequence
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 1.1V(1.8V device), 1.8V(2.65V device), 2V(3.3V device). WP pin provides hard-
ware protection and is recommended to be kept at V
required before internal circuit gets ready for any command sequences as shown in Figure 17. The two step command sequence for
program/erase provides additional software protection.
Figure 17. AC Waveforms for Power Transition
WP
WE
V
CC
1.8V device : ~ 1.5V
2.65V device : ~ 2.0V
3.3V device : ~ 2.5V
K9F1G16Q0M
K9F1G16D0M
10 s
High
IL
during power-up and power-down. A recovery time of minimum 10 s is
40
FLASH MEMORY
2.65V device : ~ 2.0V
1.8V device : ~ 1.5V
3.3V device : ~ 2.5V