m470l6524fl0 Samsung Semiconductor, Inc., m470l6524fl0 Datasheet - Page 10

• Manufacturer Part Number: m470l6524fl0
• Description: 200pin Unbuffered Sodimm Based On 512mb F-die
• Manufacturer: Samsung Semiconductor, Inc.

10.0 AC Operating Conditions
Note :
1. V
2. The value of V
3. These parameters should be tested at the pim on actual components and may be checked at either the pin or the pad in
11.0 Input/Output Capacitance
Input capacitance(A0 ~ A12, BA0 ~ BA1,RAS,CAS,WE )
Input capacitance(CKE0,CKE1)
Input capacitance( CS0, CS1)
Input capacitance( CLK0, CLK1,CLK2)
Input capacitance(DM0~DM7)
Data & DQS input/output capacitance(DQ0~DQ63)
512MB, 1GB Unbuffered SODIMM
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Input Low (Logic 0) Voltage, DQ, DQS and DM signals.
Input Differential Voltage, CK and CK inputs
Input Crossing Point Voltage, CK and CK inputs
simulation. the AC and DC input specificatims are refation to a V
ID
is the magnitude of the difference between the input level on CK and the input on CK.
IX
is expected to equal 0.5*V
Parameter/Condition
Parameter
Output
DDQ
of the transmitting device and must track variations in the DC level of the same.
Output Load Circuit (SSTL_2)
Z0=50Ω
CLOAD=30pF
Symbol
REF
Cout1
CIN1
CIN2
CIN3
CIN4
CIN5
envelope that has been bandwidth limited 20MHz.
8 of 15
V
TT
Symbol
V
V
V
V
=0.5*V
IH
ID
IL
IX
(AC)
(AC)
(AC)
(AC)
RT=50Ω
DDQ
Min
M470L6524FL0
49
42
42
25
6
6
0.5*V
V
V
=0.5*V
REF
REF
Min
0.7
DDQ
+ 0.31
DDQ
Max
50
30
-0.2
57
50
7
7
0.5*V
V
V
REF
DDQ
Min
Max
Rev. 1.01 August 2008
42
42
28
10
DDQ
M470L2923F60
65
10
- 0.31
+0.6
+0.2
DDR SDRAM
( T
A
Max
= 25°C, f=100MHz)
81
50
50
34
12
12
Unit
V
V
V
V
Note
Unit
pF
pF
pF
pF
pF
pF
3
3
1
2