m470l2923bn0-ca2 Samsung Semiconductor, Inc., m470l2923bn0-ca2 Datasheet - Page 12

• Manufacturer Part Number: m470l2923bn0-ca2
• Description: Sdram Unbuffered Module Unbuffered Module Based 512mb B-die
• Manufacturer: Samsung Semiconductor, Inc.

10.0 AC Operating Conditions
Note :
1. VID is the magnitude of the difference between the input level on CK and the input on CK.
2. The value of V
3. These parameters should be tested at the pim on actual components and may be checked at either the pin or the pad in
11.0 Input/Output Capacitance
Input capacitance(A0 ~ A12, BA0 ~ BA1,RAS,CAS,WE )
Input capacitance(CKE0,CKE1)
Input capacitance( CS0, CS1)
Input capacitance( CLK0, CLK1,CLK2)
Input capacitance(DM0~DM7)
Data & DQS input/output capacitance(DQ0~DQ63)
256MB, 512MB, 1GB Unbuffered SODIMM
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Input Low (Logic 0) Voltage, DQ, DQS and DM signals.
Input Differential Voltage, CK and CK inputs
Input Crossing Point Voltage, CK and CK inputs
simulation. the AC and DC input specificatims are refation to a Vref envelope that has been bandwidth limited 20MHz.
IX
is expected to equal 0.5*V
Parameter/Condition
Parameter
Output
DDQ
of the transmitting device and must track variations in the DC level of the same.
Output Load Circuit (SSTL_2)
Z0=50Ω
Symbol
C
Cout1
CIN1
CIN2
CIN3
CIN4
CIN5
LOAD
=30pF
V
tt
VIH(AC)
VID(AC)
VIX(AC)
M470L3324BT(U) M470L6524BT(U) M470L2923BN(V)
Symbol
VIL(AC)
=0.5*V
Min
41
34
34
25
6
6
R
DDQ
T
=50Ω
0.5*VDDQ-0.2
Max
VREF + 0.31
V
=0.5*V
38
30
45
38
7
7
REF
Min
0.7
DDQ
Min
49
42
42
25
6
6
0.5*VDDQ+0.2
VREF - 0.31
VDDQ+0.6
Max
57
50
50
30
7
7
Max
Rev. 1.5 June 2005
Min
DDR SDRAM
65
42
42
28
10
10
( TA= 25°C, f=100MHz)
Unit
V
V
V
V
Max
81
50
50
34
12
12
Note
Unit
3
3
1
2
pF
pF
pF
pF
pF
pF