m391t2863eh3-ce7/f7/e6 Samsung Semiconductor, Inc., m391t2863eh3-ce7/f7/e6 Datasheet - Page 4

• Manufacturer Part Number: m391t2863eh3-ce7/f7/e6
• Description: Ddr2 Unbuffered Sdram Module
• Manufacturer: Samsung Semiconductor, Inc.

UDIMM
1.0 DDR2 Unbuffered DIMM Ordering Information
Note :
1. “H” of Part number(12th digit) stands for Lead-Free, Halogen-Free, and RoHS compliant products.
2. “3” of Part number(13th digit) stands for Dummy Pad PCB products.
3. “S” of Part number(13th digit) stands for reduced layer PCB products.
2.0 Features
3.0 Address Configuration
• Performance range
• JEDEC standard V
• V
• 333MHz f
• 8 Banks
• Posted CAS
• Programmable CAS Latency: 3, 4, 5, 6
• Programmable Additive Latency: 0, 1 , 2 , 3, 4, 5
• Write Latency(WL) = Read Latency(RL) -1
• Burst Length: 4 , 8(Interleave/Nibble sequential)
• Programmable Sequential / Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)
• Off-Chip Driver(OCD) Impedance Adjustment
• On Die Termination with selectable values(50/75/150 ohms or disable)
• Average Refresh Period 7.8us at lower than a T
• Package: 60ball FBGA - 128Mx8 and 84ball FBGA - 64Mx16
• All of products are Lead-Free, Halogen-Free, and RoHS compliant
CL-tRCD-tRP
Speed@CL3
Speed@CL4
Speed@CL5
Speed@CL6
-
DDQ
Support High Temperature Self-Refresh rate enable feature
M378T2863EHS-CE7/F7/E6
M378T6464EHS-CE7/F7/E6
M378T5663EH3-CE7/F7/E6
M391T2863EH3-CE7/F7/E6
M391T5663EH3-CE7/F7/E6
128Mx8(1Gb) based Module
64Mx16(1Gb) based Module
= 1.8V ± 0.1V
Part Number
Organization
CK
for 667Mb/sec/pin, 400MHz f
DD
E7 (DDR2-800)
= 1.8V ± 0.1V Power Supply
5-5-5
400
533
800
-
Density
512MB
1GB
2GB
1GB
2GB
Row Address
CK
A0-A13
A0-A12
F7 (DDR2-800)
for 800Mb/sec/pin
CASE
Organization
6-6-6
533
667
800
128Mx64
256Mx64
128Mx72
256Mx72
64Mx64
-
85°C, 3.9us at 85°C < T
x64 Non ECC
x72 ECC
4 of 25
Column Address
A0-A9
A0-A9
128Mx8(K4T1G084QE)*16
128Mx8(K4T1G084QE)*18
Component Composition
128Mx8(K4T1G084QE)*8
64Mx16(K4T1G164QE)*4
128Mx8(K4T1G084QE)*9
E6 (DDR2-667)
5-5-5
400
533
667
-
CASE
< 95 °C
Bank Address
BA0-BA2
BA0-BA2
Mbps
Mbps
Mbps
Mbps
Unit
CK
Rev. 1.01 October 2008
Number of Rank
DDR2 SDRAM
1
2
1
1
2
Auto Precharge
A10
A10
Height
30mm
30mm
30mm
30mm
30mm