mt9vddf6472y-335 Micron Semiconductor Products, mt9vddf6472y-335 Datasheet - Page 23

• Manufacturer Part Number: mt9vddf6472y-335
• Description: 256mb, 512mb X72, Ecc, Sr 184-pin Ddr Sdram Rdimm
• Manufacturer: Micron Semiconductor Products

pdf: 09005aef80e119b2, source: 09005aef807d56a1
DDF9C32_64x72G.fm - Rev. B 9/04 EN
42. Random addressing changing and 50 percent of
43. Random addressing changing and 100 percent of
44. CKE must be active (high) during the entire time a
45. I
data changing at every transfer.
data changing at every transfer.
refresh command is executed. That is, from the
time the AUTO REFRESH command is registered,
CKE must be active at each rising clock edge, until
t
driven to a valid high or low logic level. I
similar to I
address and control inputs to remain stable.
REF later.
DD
2N specifies the DQ, DQS, and DM to be
DD
2F except I
DD
2Q specifies the
DD
2Q is
23
46. Whenever the operating frequency is altered, not
47. Leakage number reflects the worst case leakage
48. When an input signal is HIGH or LOW, it is
49. The -335 speed grade will operate with
Although I
I
including jitter, the DLL is required to be reset.
This is followed by 200 clock cycles (before READ
commands).
possible through the module pin, not what each
memory device contributes.
defined as a steady state logic HIGH or LOW.
= 40ns and
frequency.
256MB, 512MB (x72, ECC, SR)
DD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
184-PIN DDR SDRAM RDIMM
2F is “worst case.”
DD
t
RAS (MAX) = 120,000ns at any slower
2F, I
DD
2N, and I
©2004 Micron Technology, Inc. All rights reserved.
DD
2Q are similar,
t
RAS (MIN)