mt2ldt432h Micron Semiconductor Products, mt2ldt432h Datasheet

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mt2ldt432h

Manufacturer Part Number
mt2ldt432h
Description
Small-outline Dram Module Technology
Manufacturer
Micron Semiconductor Products
Datasheet
SMALL-OUTLINE
DRAM MODULE
FEATURES
• JEDEC pinout in a 72-pin, small-outline, dual in-
• 16MB (4 Meg x 32) and 32MB (8 Meg x 32)
• High-performance CMOS silicon-gate process
• Single +3.3V ±0.3V power supply
• All inputs, outputs and clocks are TTL-compatible
• 4,096-cycle CAS#-BEFORE-RAS# (CBR) refresh
• FAST PAGE MODE (FPM) or Extended Data-Out
• Optional self refresh (S) for low-power data retention
OPTIONS
• Package
• Timing
• Access Cycles
• Refresh Rates
PART NUMBERS
EDO Operating Mode
FPM Operating Mode
4, 8 Meg x 32 DRAM SODIMMs
DM89.p65 – Rev. 12/98
x = speed
x = speed
PART NUMBER
MT2LDT432HG-x X
MT2LDT432HG-x XS
MT4LDT832HG-x X
MT4LDT832HG-x XS
PART NUMBER
MT2LDT432HG-x
MT2LDT432HG-x S
MT4LDT832HG-x
MT4LDT832HG-x S
line memory module (SODIMM)
distributed across 64ms
(EDO) PAGE MODE access cycles
72-pin SODIMM (gold)
50ns access
60ns access
FAST PAGE MODE
EDO PAGE MODE
Standard Refresh
Self Refresh (128ms period)
CONFIGURATION
4 Meg x 32
4 Meg x 32
8 Meg x 32
8 Meg x 32
CONFIGURATION
4 Meg x 32
8 Meg x 32
4 Meg x 32
8 Meg x 32
MARKING
REFRESH
Standard
Self
Standard
Self
REFRESH
Self
Self
Standard
Standard
None
None
-5
-6
G
X
S
1
MT2LDT432H (X)(S), MT4LDT832H (X)(S)
For the latest data sheet, please refer to the Micron Web
site:
KEY TIMING PARAMETERS
EDO Operating Mode
FPM Operating Mode
SPEED
SPEED
*32MB version only
NOTE:Symbols in parentheses are not used on these modules but may
PIN
-5
-6
-5
-6
11
13
15
17
19
21
23
25
27
29
31
33 NC/RAS3#* 34
35
1
3
5
7
9
www.micronsemi.com/datasheets/datasheet.html
be used for other modules in this product family. They are for
reference only.
PIN ASSIGNMENT (Front View)
FRONT
PRD1
DQ10
DQ12
DQ14
DQ15
DQ1
DQ3
DQ5
DQ7
DQ8
72-Pin Small-Outline DIMM
A10
A11
104ns
110ns
V
A1
A3
A5
A8
Micron Technology, Inc., reserves the right to change products or specifications without notice.
84ns
90ns
1
t
t
SS
RC
RC
PIN
10
12
14
16
18
20
22
24
26
28
30
32
36
2
4
6
8
t
t
50ns
60ns
50ns
60ns
RAC
RAC
BACK
RAS2#
DQ11
DQ13
DQ0
DQ2
DQ4
DQ6
DQ9
V
V
NC
NC
A0
A2
A4
A6
A7
A9
DD
DD
20ns
25ns
30ns
35ns
DRAM SODIMMs
t
t
P C
P C
PIN
37
39
41
43
45 NC/RAS1#* 46
47
49
51
53
55
57
59
61
63
65
67
69
71
4, 8 MEG x 32
25ns
30ns
25ns
30ns
t
t
FRONT
CAS2#
CAS1#
AA
AA
DQ16
DQ18
DQ20
DQ22
DQ25
DQ28
DQ30
PRD3
PRD5
PRD7
WE#
V
V
NC
NC
DD
SS
©1998, Micron Technology, Inc.
t
t
13ns
15ns
13ns
15ns
CAC
CAC
ADVANCE
PIN
38
40
42
44
48
50
52
54
56
58
60
62
64
66
68
70
72
NC (A12)
NC (A13)
CAS0#
CAS3#
RAS0#
BACK
DQ17
DQ19
DQ21
DQ23
DQ24
DQ26
DQ27
DQ29
DQ31
PRD2
PRD4
PRD6
V
t
10ns
30ns
40ns
CAS
8ns
t
SS
R P

Related parts for mt2ldt432h

mt2ldt432h Summary of contents

Page 1

... Meg x 32 MT4LDT832HG-x 8 Meg x 32 MT4LDT832HG Meg speed 4, 8 Meg x 32 DRAM SODIMMs DM89.p65 – Rev. 12/98 MT2LDT432H (X)(S), MT4LDT832H (X)(S) For the latest data sheet, please refer to the Micron Web site: www.micronsemi.com/datasheets/datasheet.html PIN ASSIGNMENT (Front View) 72-Pin Small-Outline DIMM 1 MARKING PIN ...

Page 2

... GENERAL DESCRIPTION The MT2LDT432H (X)(S) and MT4LDT832H (X)(S) are randomly accessed 16MB and 32MB memories organized in a small-outline x32 configuration. They are specially processed to operate from 3V to 3.6V for low-voltage memory systems. During READ or WRITE cycles, each bit is uniquely addressed through the address bits, which are entered 12 bits (A0-A11 time ...

Page 3

... CAS0# CAS1# RAS0# A0-A11 12 WE# CAS2# CAS3# RAS2 Meg x 32 DRAM SODIMMs DM89.p65 – Rev. 12/98 FUNCTIONAL BLOCK DIAGRAM MT2LDT432H (X)(S) (16MB) 12 A0-A11 U1 WE# DQ0- CASL# 16 DQ15 CASH# RAS# OE# 12 A0-A11 U2 WE# DQ16- CASL# 16 DQ31 CASH# RAS# OE# U1-U2 = MT4LC4M16R6TG (S) EDO PAGE MODE ...

Page 4

CAS0# CAS1# RAS0# WE# CAS2# CAS3# RAS2# 12 A0-A11 RAS1# RAS3 Meg x 32 DRAM SODIMMs DM89.p65 – Rev. 12/98 FUNCTIONAL BLOCK DIAGRAM MT4LDT832H (X)(S) (32MB) 12 A0-A11 U1 WE# CASL# DQ0- DQ15 CASH# RAS# OE# 12 A0-A11 ...

Page 5

... Meg x 32 DRAM SODIMMs DM89.p65 – Rev. 12/98 JEDEC-DEFINED PRESENCE-DETECT – MT2LDT432H (X)(S) (16MB) SYMBOL PIN -5 -6 PRD1 PRD2 PRD3 PRD4 PRD5 PRD6 PRD7 JEDEC-DEFINED PRESENCE-DETECT – MT4LDT832H (X)(S) (32MB) SYMBOL PIN -5 -6 PRD1 ...

Page 6

ABSOLUTE MAXIMUM RATINGS* Voltage on V Supply DD Relative to V ..................................... -1V to +4.6V SS Voltage on Inputs or I/O Pins Relative to V ................................. -1V to +4.6V SS Operating Temperature, T (ambient) .. 0°C to +70°C A Storage ...

Page 7

I OPERATING CONDITIONS AND MAXIMUM LIMITS DD (Notes +3.3V ±0.3V) DD PARAMETER/CONDITION STANDBY CURRENT: TTL (RAS# = CAS STANDBY CURRENT: CMOS (RAS# = CAS# • 0.2V; DQs may be ...

Page 8

FAST PAGE MODE AC ELECTRICAL CHARACTERISTICS (Notes 10, 11, 12, 19 CHARACTERISTICS - FAST PAGE MODE OPTION PARAMETER Access time from column address Column-address hold time (referenced to RAS#) Column-address setup time Row-address ...

Page 9

FAST PAGE MODE AC ELECTRICAL CHARACTERISTICS (Notes 10, 11, 12, 19 CHARACTERISTICS - FAST PAGE MODE OPTION PARAMETER Row-address hold time RAS# pulse width RAS# pulse width (Self Refresh) RAS# pulse width (FAST ...

Page 10

EDO PAGE MODE AC ELECTRICAL CHARACTERISTICS (Notes 10, 11, 12, 19 CHARACTERISTICS - EDO PAGE MODE OPTION PARAMETER Access time from column address Column-address setup to CAS# precharge Column-address hold time (referenced to ...

Page 11

EDO PAGE MODE AC ELECTRICAL CHARACTERISTICS (Notes 10, 11, 12, 19 CHARACTERISTICS - EDO PAGE MODE OPTION PARAMETER READ command hold time (referenced to CAS#) READ command setup time Refresh period (4,096 cycles) ...

Page 12

NOTES 1. All voltages referenced This parameter is sampled dependent on output loading and cycle DD rates. Specified values are obtained with minimum cycle time and the outputs open. 4. Enables ...

Page 13

V IH RAS CRP V CAS ASR V IH ROW ADDR WE FAST PAGE MODE AND EDO PAGE MODE TIMING PARAMETERS -5 ...

Page 14

V IH RAS CRP CAS ASR V IH ADDR ROW IOH DQ V IOL FAST PAGE MODE AND EDO PAGE MODE TIMING PARAMETERS -5 ...

Page 15

V IH RAS CSH t CRP V IH CAS RAD t ASR t RAH V IH ADDR V ROW WE IOH DQ OPEN V IOL FAST PAGE MODE ...

Page 16

V IH RAS CSH t CRP V CAS RAD t ASR t RAH V IH ADDR V ROW OPEN V OL EDO PAGE MODE ...

Page 17

FAST/EDO-PAGE-MODE EARLY WRITE CYCLE V IH RAS CSH t CRP V IH CAS RAD t ASR t RAH V IH ADDR ROW WCS ...

Page 18

EDO-PAGE-MODE READ EARLY WRITE CYCLE V IH RAS CRP t RCD V IH CAS RAD t ASR t RAH V IH ADDR ROW WE IOH DQ OPEN ...

Page 19

FAST-PAGE-MODE READ EARLY WRITE CYCLE V IH RAS CRP V IH CAS ASR V IH ADDR V ROW WE FAST PAGE MODE TIMING PARAMETERS ...

Page 20

V IH RAS CRP V CAS ASR V IH ROW ADDR WE EDO PAGE MODE TIMING PARAMETERS -5 SYMBOL MIN MAX t ...

Page 21

V IH RAS CRP V IH CAS ASR V IH ADDR V ROW FAST PAGE MODE AND EDO PAGE MODE TIMING PARAMETERS -5 SYMBOL MIN MAX t ASR ...

Page 22

RAS RPC CSR V IH CAS WRP RAS RPC t ...

Page 23

V IH RAS CRP CAS ASR t RAH V IH ADDR ROW FAST PAGE MODE AND EDO PAGE MODE TIMING PARAMETERS -5 SYMBOL MIN MAX ...

Page 24

R (3X) .071 (1.80) (2X) .125 (3.18) .071 (1.80) TYP .079 (2.00) .197 (5.00) .079 (2.00) R (3X) .071 (1.80) (2X) .125 (3.18) .071 (1.80) TYP .079 (2.00) .197 (5.00) NOTE: All dimensions in inches (millimeters) MAX or ...

Page 25

S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 E-mail: prodmktg@micronsemi.com, Internet: http://www.micronsemi.com, Customer Comment Line: 800-932-4992 Micron is a registered trademark of Micron Technology, Inc Meg x 32 DRAM SODIMMs DM89.p65 – Rev. 12/98 ...

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