ace2303 ACE Technology Co., LTD., ace2303 Datasheet - Page 3

• Manufacturer Part Number: ace2303
• Description: P-channel Enhancement Mode Mosfet
• Manufacturer: ACE Technology Co., LTD.

Electrical Characteristics
(T
Static
Drain-Source Breakdown Voltage
Dynamic
Zero Gate Voltage Drain Current
A
=25 ,
Reverse Transfer Capacitance
Drain-Source On-Resistance
Forward Transconductance
℃ Unless otherwise noted)
Gate Threshold Voltage
On-State Drain Current
Diode Forward Voltage
Gate Leakage Current
Gate-Source Charge
Output Capacitance
Gate-Drain Charge
Total Gate Charge
Input Capacitance
Turn-On Time
Turn-Off Time
Parameter
Technology
Symbol
V
R
V
I
(BR)DSS
C
t
t
I
I
D(ON)
DS(ON)
V
C
Q
Q
C
gfs
GS(th)
Q
d(on)
d(off)
GSS
DSS
t
t
oss
SD
iss
rss
gs
gd
r
f
g
V
P-Channel Enhancement Mode MOSFET
DS
V
I
V
=-30V, V
V
V
V
V
V
D
V
V
I
V
V
DS
S
DS
≡-1.0A, V
DS
GS
DS
GS
DS
DS
DD
DS
=-1.25A, V
GS
=-15V, V
=V
≦-5V, V
=0.V, V
=-4.5V, I
=-10V, I
=-10V, I
Conditions
=-15V, V
=-15V, R
=-30V, V
=0V, I
I
D
f=1MHz
GS
R
≣-1.7A
G
, I
GS
=6Ω
D
D
=0V T
GEN
GS
=-250uA
=-10uA
D
GS
GS
D
D
GS
=-2.6A
=-1.7A
GS
GS
L
=±20V
=-2.0A
=-10V,
=15Ω
=-10V
=-10V
=0V,
=0V
=0V
J
=55℃
Min.
-1.0
-30
-6
0.095 0.130
0.125 0.180
Typ
-0.8
226
2.4
5.8
0.8
1.5
87
19
18
9
9
6
ACE2303
Max.
±100
-3.0
-1.2
-10
VER 1.2
10
20
20
35
20
-1
Unit
nA
uA
nC
pF
ns
Ω
V
A
S
V
3