ace2305 ACE Technology Co., LTD., ace2305 Datasheet - Page 3

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ace2305

Manufacturer Part Number
ace2305
Description
P-channel Enhancement Mode Mosfet
Manufacturer
ACE Technology Co., LTD.
Datasheet
Electrical Characteristics
(TA=25 ,
Static
Drain-Source Breakdown Voltage V
Dynamic
Zero Gate Voltage Drain Current
Reverse Transfer Capacitance
Drain-Source On-Resistance
Forward Transconductance
℃ Unless otherwise noted)
Gate Threshold Voltage
On-State Drain Current
Diode Forward Voltage
Gate Leakage Current
Gate-Source Charge
Output Capacitance
Gate-Drain Charge
Total Gate Charge
Input Capacitance
Turn-On Time
Turn-Off Time
Parameter
Technology
Symbol
R
V
I
(BR)DSS
t
t
C
I
I
D(ON)
DS(ON)
Gfs
V
C
Q
Q
C
GS(th)
d(on)
d(off)
GSS
Q
DSS
t
t
oss
SD
iss
rss
gs
gd
r
f
g
V
DS
P-Channel Enhancement Mode MOSFET
I
V
V
=-12V, V
V
V
V
V
V
V
D
V
V
V
DS
DS
≡-1.0A, V
V
I
DS
DS
GS
GS
GS
DS
DS
GS
S
V
DS
DS
=-1.5A, V
≦-5V, V
≦-5V, V
=-6V, V
DD
=V
=-5.0V, I
=-4.5V, I
=-2.5V, I
=-1.8V, I
=0.V, V
=0V, I
=-12V, V
Conditions
=-6V, V
I
=-6V, R
D
f=1MHz
GS
R
≣-2.8A
G
, I
GS
=6Ω
D
D
=0V T
GEN
GS
=-250uA
GS
=-250uA
GS
GS
D
D
D
D
GS
GS
=-4.5V,
GS
L
=±10V
=-3.5A
=-3.0A
=-2.0A
=-3.5A
=-4.5V
=-2.5V
=6Ω
=-4.5V
=0V,
=0V
=0V
J
=55℃
-0.35
Min.
-15
-4
-2
0.055
0.065
0.085 0.105
-0.8
485
Typ
8.5
4.8
1.0
1.0
85
40
10
13
18
15
ACE2305
-0.85
Max.
±100
0.70
0.85
-1.2
-10
VER 1.2
16
23
25
20
-1
8
Unit
nC
nA
uA
pF
ns
V
A
S
V
3

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