m366s3253cts Samsung Semiconductor, Inc., m366s3253cts Datasheet - Page 5

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m366s3253cts

Manufacturer Part Number
m366s3253cts
Description
32mx64 Sdram Dimm Based 32mx8, 4banks, Refresh, 3.3v Synchronous Drams With
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
(Recommended operating condition unless otherwise noted, T
DC CHARACTERISTICS
M366S3253CTS
Operating current
(One bank active)
Precharge standby cur-
rent in power-down mode
Precharge standby cur-
rent in non power-down
mode
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
Operating current
(Burst mode)
Refresh current
Self refresh current
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. Unless otherwise noticed, input swing level is CMOS(V
Parameter
Symbol
I
I
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC2
CC2
CC3
CC3
I
I
I
I
CC1
CC4
CC5
CC6
PS
NS
PS
NS
N
N
P
P
Burst length = 1
t
I
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
CKE
CKE & CLK
CKE
Input signals are changed one time during 20ns
CKE
Input signals are stable
I
Page burst
4banks Activated.
t
t
CKE
RC
O
O
CCD
RC
= 0 mA
= 0 mA
= 2CLKs
t
t
RC
RC
V
V
V
V
V
V
0.2V
IH
IH
IH
IH
(min)
IL
IL
(min)
(max), t
(min), CS
(min), CLK
(max), t
(min), CS
(min), CLK
V
V
IL
IL
Test Condition
(max), t
(max), t
CC
CC
A
= 10ns
= 10ns
V
V
= 0 to 70 C)
V
V
IH
IH
IH
CC
CC
IL
IL
(min), t
(min), t
/V
(max), t
(max), t
IL
=
=
=V
DDQ
CC
CC
CC
CC
PC133/PC100 Unbuffered DIMM
= 10ns
= 10ns
/V
=
=
SSQ
).
C
L
1,760 1,600 1,520 1,520
-7C
800
880
720
880
-7A
Version
REV. 0.1 Sept. 2001
160
240
200
16
16
80
48
48
24
12
720
800
-1H
720
800
-1L
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Note
1
1
2

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