hcts160t Intersil Corporation, hcts160t Datasheet - Page 3
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hcts160t
Manufacturer Part Number
hcts160t
Description
Radiation Hardened Synchronous Counter
Manufacturer
Intersil Corporation
Datasheet
1.HCTS160T.pdf
(3 pages)
Die Characteristics
DIE DIMENSIONS:
METALLIZATION:
SUBSTRATE POTENTIAL:
BACKSIDE FINISH:
Metallization Mask Layout
NOTE: The die diagram is a generic plot from a similar HCS device. It is intended to indicate approximate die size and bond pad location. The mask
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
(2642 m x 2184 m x 533 m 51.0 m)
104 x 86 x 21mils 2mil
Type: Al Si
Thickness: 11.0k
Unbiased Silicon on Sapphire
Sapphire
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
series for the HCTS160 is TA14445A.
Å
1k
Å
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
3
PE (7)
P0 (3)
P1 (4)
P2 (5)
P3 (6)
CD
(2)
GND
(8)
HCTS160T
HCTS160T
SPE
(9)
MR
(1)
PASSIVATION:
WORST CASE CURRENT DENSITY:
TRANSISTOR COUNT:
PROCESS:
Type: Silox (S
Thickness: 13.0k
< 2.0e5 A/cm
676
CMOS SOS
V
(16)
CC
(10)
TE
2
i
O
2
Å
)
(15) TC
(14) Q0
(13) Q1
(12) Q2
(11) Q3
2.6k
Å