mgw12n120 Freescale Semiconductor, Inc, mgw12n120 Datasheet - Page 3

• Manufacturer Part Number: mgw12n120
• Description: Insulated Gate Bipolar Transistor
• Manufacturer: Freescale Semiconductor, Inc

Motorola TMOS Power MOSFET Transistor Device Data
1600
1200
800
400
30
20
10
40
24
20
16
12
0
8
4
0
GATE–TO–EMITTER OR COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
0
0
5
0
V CE = 10 V
250 µs PULSE WIDTH
T J = 25°C
Figure 1. Output Characteristics, T J = 25°C
C res
1
V CE , COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
V CE = 0 V
Figure 3. Transfer Characteristics
V GE , GATE–TO–EMITTER VOLTAGE (VOLTS)
Figure 5. Capacitance Variation
7
5
2
C oes
3
C ies
10
9
4
T J = 125°C
TYPICAL ELECTRICAL CHARACTERISTICS
11
15
5
V GE = 20 V
6
25°C
13
20
7
12.5 V
17.5 V
7.5 V
15 V
15
25
8
3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
16
12
2
8
4
0
30
20
10
40
– 50
0
0
0
Figure 2. Output Characteristics, T J = 125°C
V GE = 15 V
250 µs PULSE WIDTH
Figure 4. Collector–to–Emitter Saturation
Figure 6. Gate–to–Emitter Voltage versus
T J = 125°C
Voltage versus Junction Temperature
V CE , COLLECTOR–TO–EMITTER VOLTAGE (VOLTS)
1
5
Q 1
T J , JUNCTION TEMPERATURE (°C)
0
2
10
Q g , TOTAL GATE CHARGE (nC)
Total Charge
3
15
Q T
I C = 10 A
50
7.5 A
4
5 A
Q 2
20
5
25
MGW12N120
100
6
T J = 25°C
I C = 10 A
V GE = 15 V
V GE = 20 V
30
7
17.5 V
12.5 V
10 V
15 V
150
35
3
8