hx6256 Honeywell International's Solid State Electronics Center (SSEC), hx6256 Datasheet - Page 5

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hx6256

Manufacturer Part Number
hx6256
Description
32k X 8 Static Ram Solid State Electronics Center
Manufacturer
Honeywell International's Solid State Electronics Center (SSEC)
Datasheet

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HX6256
DC ELECTRICAL CHARACTERISTICS
(1) Typical operating conditions: VDD= 5.0 V,TA=25°C, pre-radiation.
(2) Worst case operating conditions: VDD=4.5 V to 5.5 V, TA=-55°C to +125°C, post total dose at 25°C.
(3) All inputs switching. DC average current.
www.honeywell.com/radhard
IDDSB1
IDDSBMF
IDDOPW
IDDOPR
II
IOZ
VIL
VIH
VOL
VOH
Symbol
Static Supply Current
Standby Supply Current –
Deselected
Dynamic Supply Current –
Selected
Dynamic Supply Current –
Selected
Input Leakage Current
Output Leakage Current
Low-Level Input Voltage
High-Level Input Voltage
Low-Level Output Voltage
High-Level Output Voltage
(Write)
(Read)
Parameter
CMOS
CMOS
TTL
TTL
Typical
0.05
0.2
0.2
3.4
2.8
1.7
3.2
0.3
4.3
4.5
(1)
0.7xVDD
Worst Case (2)
V
0.05
Min
-10
2.2
4.2
-5
DD
-
0.3xVDD
Max
0.05
+10
1.5
1.5
4.0
4.0
0.8
0.4
+5
Units
mA
mA
mA
mA
µA
µA
V
V
V
V
VIH=VDD, IO=0
VIL=VSS, f=0MHz
NCS=VDD, IO=0,
f=40 MHZ
F=1 MHz, IO=0, CE=VIH=VDD
NCS=VIL=VSS (3)
F=1 MHz, IO=0, CE=VIH=VDD
NCS=VIL=VSS (3)
VSS ^ VI ^ VDD
VSS ^ VI ^ VDD
Output = high Z
March Pattern
VDD = 4.5V
March Pattern
VDD = 4.5V
VDD=4.5V, IOL = 10 mA (CMOS)
= 8 mA (TTL) VDD=4.5V, IOL = 200
µA
VDD=4.5V, IOH=-5mA
VDD=4.5V, IOH=-200 µA
Test Conditions
5

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