tpcp8005-h TOSHIBA Semiconductor CORPORATION, tpcp8005-h Datasheet
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tpcp8005-h
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tpcp8005-h Summary of contents
Page 1
... V ±20 V GSS 0.137 150 °C ch −55 to 150 T °C stg 1 TPCP8005-H Unit: mm 0.33±0. 0.475 0.05 M 0.65 2.9±0.1 A 0.8±0.05 S 0.025 S +0.1 0.28 0.17±0.02 -0.11 +0.13 1.12 -0.12 +0.13 1.12 -0.12 +0.1 0.28 -0.11 1. Source 5. Drain 2. Source 6. Drain 3. Source 7. Drain 4. Gate 8. Drain JEDEC ― ...
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... Year of manufacture (The last digit of the calendar year) Symbol Max Unit R 74.4 °C/W th (ch-a) (Note 2a) R 148.8 °C/W th (ch-a) (Note 2b) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm Ω TPCP8005-H FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) = 11A 2007-12-25 ...
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... gs1 ∼ − (Ta = 25°C) Symbol Test Condition ⎯ I DRP = DSF TPCP8005-H Min Typ. Max = 0 V ⎯ ⎯ ±100 = 0 V ⎯ ⎯ 10 ⎯ ⎯ 30 ⎯ ⎯ 15 ⎯ 1.5 2.5 ⎯ 12.1 15.7 ⎯ 9.8 12.9 ⎯ ...
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... Drain-source voltage V 0.2 0.15 0.1 0. (V) Gate-source voltage V 100 10 1 0.1 100 4 TPCP8005-H I – 3.4 3.5 Common source Ta = 25°C Pulse test 3.3 3 3.0V 0.4 0.8 1.2 1 – Common source Ta = 25℃ Pulse test 5.5 2 ...
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... Ambient temperature Common source 25°C 40 Pulse test 160 ° 5 TPCP8005-H I – 4 Common source Ta = 25°C Pulse test −1 −0.4 −0.6 −0.8 ( – ...
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... I D max (Pulse =1ms * 10 t =10ms * * Single – pulse Ta = 25℃ 1 Curves must be derated linearly with increase in temperature. V DSS max 0.1 10 0.1 1 Drain-source voltage – 0.01 0 Pulse width t (s) w 100 (V) 6 TPCP8005-H (2) (1) Single - pulse 100 1000 2007-12-25 ...
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... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPCP8005-H 2007-12-25 ...