tpcp8001-h TOSHIBA Semiconductor CORPORATION, tpcp8001-h Datasheet - Page 5

• Manufacturer Part Number: tpcp8001-h
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type Ultra High Speed U-mosiii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
40
35
30
25
20
15
10
10
1.6
1.2
0.8
0.4
5
0
−80
0.1
2
0
0
Common source
Common source
(1)
(2)
V GS = 0 V
Ta = 25°C
f = 1 MHz
Pulse test
−40
Drain-source voltage V
Ambient temperature Ta (
Ambient temperature Ta (
V GS = 4.5 V
50
Capacitance – V
(1)Device mounted on a glass-epoxy
(2)Device mounted on a glass-epoxy
ｔ＝5s
0
1
board (a) (Note 2a)
board (b) (Note 2b)
R
10 V
DS (ON)
P
D
100
40
– Ta
I D = 1.8,3.6,7.2 A
– Ta
I D = 1.8,3.6,7.2 A
80
DS
10
DS
150
C oss
°
C rss
C iss
(V)
120
C)
°
C)
160
200
100
5
100
2.5
2.0
1.5
1.0
0.5
10
50
40
30
20
10
1
0
−80
0
0
0
Common source
Common source
Common source
V DS
Ta = 25°C
Pulse test
I D = 7.2 A
Ta = 25°C
Pulse test
V DS = 10 V
I D = 1 mA
Pulse test
−0.2
−40
Drain-source voltage V
Ambient temperature Ta (°C)
Total gate charge Q
10
4
4.5
Dynamic input/output
−0.4
0
characteristics
V DD = 6 V
I
8
DR
V
3
th
−0.6
– V
40
1
– Ta
24 V
DS
12
V GS = 0 V
−0.8
12 V
80
g
DS
TPCP8001-H
(nC)
16
(V)
120
−1.0
2006-05-29
20
−1.2
160
20
16
12
8
4
0