tpcp8008-h TOSHIBA Semiconductor CORPORATION, tpcp8008-h Datasheet - Page 5

• Manufacturer Part Number: tpcp8008-h
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
1.6
1.2
0.8
0.4
30
25
20
15
10
10
−80
5
0
2
0
0.1
0
Common source
Pulse test
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
(1)
(2)
V GS = 4.5 V
−40
Drain-source voltage V
Ambient temperature Ta (
Ambient temperature Ta (
40
V GS = 10 V
Capacitance – V
(1)Device mounted on a glass-epoxy
(2)Device mounted on a glass-epoxy
t=5 s
0
1
board (a) (Note 2a)
board (b) (Note 2b)
R
80
DS (ON)
P
D
I D = 2, 4, 8 A
40
– Ta
– Ta
120
80
10
DS
DS
I D = 2, 4, 8 A
160
°
(V)
120
C)
°
C)
C oss
C rss
C iss
160
100
200
5
2.5
1.5
0.5
100
50
40
30
20
10
0.1
10
3
2
1
0
0
−80
1
0
0
Common source
V DS = 10 V
I D = 0.1 mA
Pulse test
V DS = 24 V
12
6
−0.2
−40
Drain-source voltage V
10
Ambient temperature Ta (
Total gate charge Q
4
Dynamic input/output
4.5
−0.4
0
characteristics
3
I
DR
V
1
th
−0.6
– V
40
8
– Ta
DS
V DD = 24 V
6
V GS = 0 V
−0.8
80
g
Common source
I D = 8 A
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
DS
(nC)
12
TPCP8008-H
12
°
(V)
120
C)
−1
2010-03-09
−1.2
160
16
20
16
12
8
4
0