tpcp8402 TOSHIBA Semiconductor CORPORATION, tpcp8402 Datasheet - Page 10

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tpcp8402

Manufacturer Part Number
tpcp8402
Description
Toshiba Field Effect Transistor Silicon P, N Channel Mos Type U-mos Iv / U-mos Iii
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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N-ch
100
0.1
10
1
0.1
Curves must be derated linearly
with increase in temperature.
* Single pulse
I D max (Pulse) *
Ta = 25°C
Drain−source voltage V
10 ms *
Safe operating area
1000
1
100
10
0.001
1
Single pulse
V DSS
10
0.01
max
1 ms *
DS
(V)
0.1
100
Pulse width t
10
r
th
1
– t
w
Device mounted on a glass-epoxy board (a) (Note 2a)
Device mounted on a glass-epoxy board (b) (Note 2b)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
w
(4)
(s)
10
100
(2)
(3)
(1)
1000
TPCP8402
2006-11-13

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