tpcp8404 TOSHIBA Semiconductor CORPORATION, tpcp8404 Datasheet

tpcp8404

Manufacturer Part Number

tpcp8404

Description

Toshiba Field Effect Transistor Silicon P, N Channel Mos Type U-mo/u-mos

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheet

1.TPCP8404.pdf (11 pages)

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Portable Equipment Applications

Motor Drive Applications

•

Absolute Maximum Ratings

Low drain-source ON-resistance : P Channel R

High forward transfer admittance : P Channel |Y

Low leakage current : P Channel I

Enhancement mode

: P Channel V

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain

current

Drain power

dissipation

(t = 5 s)

Drain power

dissipation

(t = 5 s)

Single pulse avalanche energy

(Note 4)

Avalanche current

Repetitive avalanche energy

Single-device value at dual operation

Channel temperature

Storage temperature range

Note: For Notes 1 to 5, refer to the next page.

This transistor is an electrostatic-sensitive device. Handle with caution.

N Channel V

(Note 2a)

(Note 2b)

TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOⅤ/U-MOSⅣ)

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Characteristics

Pulse

Single-device operation

Single-device value at

dual operation (Note 3b)

Single-device operation

Single-device value at

dual operation (Note 3b)

= −0.8 to −2.0 V (V

= 1.3 to 2.5 V (V

(Note 2a, 3b, 5)

= 20 kΩ)

N Channel I

(Note 3a)

(Note 1)

N Channel R

DSS

(Ta = 25°C)

Symbol

= 10 V, I

N Channel |Y

DGR

GSS

D (1)

D (2)

D (1)

D (2)

DSS

stg

TPCP8404

= −10 V, I

= −10 μA (max) (V

= 10 μA (max) (V

1.48

1.23

0.58

0.36

−30

±20

−16

DS (ON)

= 1 mA)

2.6

DS (ON)

−4

−2

−55 to 150

= −1 mA)

Rating

0.009

| = 7.3 S (typ.)

| = 8 S (typ.)

150

= 38 mΩ(typ.)

（VGS=10V)

= 38 mΩ(typ.)

(VGS=−10V)

1.48

1.23

0.58

0.36

±20

2.6

= 30 V)

= −30 V)

Unit

°C

Weight: 0.017 g (typ.)

Circuit Configuration

Marking

JEDEC

JEITA

TOSHIBA

1．Source1

2．Gate1

3．Source2

4．Gate2

0.475

0.33±0.05

0.025

0.65

8404

(Note 6)

2.9±0.1

5．Drain2

6．Drain2

7．Drain1

8．Drain1

0.17±0.02

0.05

2-3V1G

TPCP8404

2010-02-01

⎯

1.12

0.28

0.8±0.05

Lot No.

+0.1

+0.13

+0.1

-0.11

Unit: mm

0.05

-0.12

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tpcp8404 Summary of contents

Page 1

... D (1) P 1.23 1.23 D (2) P 0.58 0.58 D (1) P 0.36 0.36 D (2) E 2.6 2 − 0.009 150 ch −55 to 150 T stg 1 TPCP8404 0.33±0.05 0. 0.475 0.65 2.9±0.1 0.025 S S 0.17±0.02 1．Source1 5．Drain2 V 2．Gate1 6．Drain2 3．Source2 7．Drain1 V 4．Gate2 8．Drain1 V ⎯ JEDEC A ⎯ JEITA TOSHIBA 2-3V1G Weight: 0 ...

Page 2

... R 101.6 th (ch-a) (2) R 215.5 th (ch-a) (1) (Note 3a) °C/W R 347.2 th (ch-a) (2) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) = 25°C (initial 0.5 mH 25°C (initial 0.5 mH Ω TPCP8404 FR-4 25.4 × 25.4 × 0.8 (Unit: mm) ( Ω − 2010-02-01 ...

Page 3

... GS = − gs1 Q gd (Ta = 25°C) Symbol Test Condition ⎯ I DRP = − DSF TPCP8404 Min Typ. Max = 0 V ⎯ ⎯ ±100 = 0 V ⎯ ⎯ − −30 ⎯ ⎯ −10 ⎯ ⎯ −0.8 ⎯ −2.0 ⎯ ...

Page 4

... Q g ≈ gs1 Q gd (Ta = 25°C) Symbol Test Condition ⎯ I DRP = DSF TPCP8404 Min Typ. Max = 0 V ⎯ ⎯ ±100 = 0 V ⎯ ⎯ 10 ⎯ 30 ⎯ 10 ⎯ 1.3 2.5 ⎯ ⎯ ⎯ ...

Page 5

... −2.4 V −0.6 −0.8 −1 (V) DS −1.5 −0.5 −3 −4 −5 ( 1000 100 100 −10 −100 ( TPCP8404 I – −10 −4 −3.6 Common source −3 25°C −4.5 Pulse test −8 −6 −3.2 −6 −4 − −2 −1 − ...

Page 6

... DS −30 (Note 2a −24 V −25 (Note 3b) (Note 2b) −20 (Note 3a) (Note 3b) −15 −10 −5 0 150 200 0 6 TPCP8404 I – −10 −3 −4.5 − Common source Ta = 25°C Pulse test 0.8 0.2 0.4 0.6 1 Drain−source voltage V ( – Ta ...

Page 7

... Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) 1 0.01 0.1 Pulse width t ( DSS max −10 −100 ( TPCP8404 (4) (3) (2) (1) 10 100 1000 2010-02-01 ...

Page 8

... Pulse test 3.6 3.4 3 2.8 V 0.6 0.8 1.0 (V) DS 2.0 1.5 0 −55° ( 1000 100 25 10 100 10 ( TPCP8404 8 I – Common source 25°C 4 Pulse test Drain−source voltage V ( – Common source Ta= 25℃ ...

Page 9

... DS 30 (Note 2a (Note 3b) (Note 2b) 20 (Note 3a) (Note 3b 150 175 200 0 9 TPCP8404 I – 4 Common source Ta = 25°C Pulse test −0.2 −0.4 −0.6 −0.8 −1.0 Drain-source voltage V ( – Ta ...

Page 10

... Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) 0.01 0.1 1 Pulse width t ( DSS max 10 100 ( TPCP8404 (4) (3) (2) (1) 10 100 1000 2010-02-01 ...

Page 11

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 11 TPCP8404 2010-02-01 ...

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