tpcp8406 TOSHIBA Semiconductor CORPORATION, tpcp8406 Datasheet - Page 6
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tpcp8406
Manufacturer Part Number
tpcp8406
Description
Mosfets Silicon P-/n-channel Mos U-mos?/u-mos?-h
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.TPCP8406.pdf
(14 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TPCP8406
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Part Number:
tpcp8406 LNMBF
Manufacturer:
TOSHIBA/东芝
Quantity:
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7. 7. 7. 7. Marking
6.4.
6.4.
6.4.
6.4. Source-Drain Characteristics (T
Marking
Marking
Marking
Note 8: Ensure that the channel temperature does not exceed 150.
Reverse drain current
(pulsed)
Diode forward voltage
Source-Drain Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (T
Characteristics
(Note 8)
P-ch
N-ch
P-ch
N-ch
P/N
Symbol
a a a a
V
I
DRP
DSF
Fig.
Fig.
Fig.
Fig. 7.1
= 25
= 25
= 25
= 25 unless otherwise specified)
7.1
7.1
7.1 Marking
I
I
DR
DR
6
= -5 A, V
= 6 A, V
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Marking
Marking
Marking
Test Condition
GS
GS
= 0 V
= 0 V
Min
Typ.
TPCP8406
2011-03-14
Max
-1.2
-20
1.2
24
Rev.2.0
Unit
A
V