tpcp8301 TOSHIBA Semiconductor CORPORATION, tpcp8301 Datasheet
tpcp8301
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tpcp8301 Summary of contents
Page 1
... DP P 1.48 D (1) P 1.23 D (2) P 0.58 D (1) P 0.36 D (2) (Note 4) E 6.5 AS − 0. 150 ch −55 to 150 T stg TPCP8301 0.33±0.05 0. 0.475 1 4 0.65 2.9±0.1 0.025 S S 0.17±0.02 Unit Source1 5. Drain2 A 2. Gate1 6. Drain2 3. Source2 7. Drain1 4. Gate2 8. Drain1 ⎯ JEDEC W ⎯ ...
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... Year of manufacture (The last digit of the calendar year) Symbol Max Unit R 84.5 th (ch-a) (1) (Note 3a) °C/W R 101.6 th (ch-a) (2) R 215.5 th (ch-a) (1) (Note 3a) °C/W R 347.2 th (ch-a) (2) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm Ω − TPCP8301 FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) 2006-11-17 ...
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... − gs1 (Ta = 25°C) Symbol Test Condition ⎯ I DRP = − DSF TPCP8301 Min Typ. Max = 0 V ⎯ ⎯ ± ⎯ ⎯ − −20 ⎯ ⎯ = -12 V −8 ⎯ ⎯ −0.5 ⎯ −1.2 ⎯ ...
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... Gate−source voltage V 1000 Common source Ta = 25°C Pulse test 100 10 −10 −0.1 Drain current I 4 TPCP8301 I – −2.8 Common source −4 − 25°C −6 Pulse test −2.6 −2.4 −2.2 −2.0 −1.8 −1 −1.4 V − ...
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... Ambient temperature Ta ( (V) −20 (Note 2a −16 (Note 3b −16 V (Note 2b) (Note 3a) −12 (Note 3b) −8 −8 −4 − 200 C) ° 5 TPCP8301 I – −5 −3 − Common source Ta = 25°C Pulse test 0.4 0.6 0.8 1.0 1.2 ( – ...
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... Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b 0 Pulse width t ( DSS max −100 (V) 6 TPCP8301 (4) (3) (2) (1) 単発パルス 100 1000 2006-11-17 ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPCP8301 20070701-EN 2006-11-17 ...