tpcp8902 TOSHIBA Semiconductor CORPORATION, tpcp8902 Datasheet - Page 4

• Manufacturer Part Number: tpcp8902
• Description: Toshiba Transistor Silicon Npn / Pnp Epitaxial Type Pct Process
• Manufacturer: TOSHIBA Semiconductor CORPORATION

PNP
-0.03
-0.01
-1.6
-1.2
-0.8
-0.4
-0.3
-0.1
-1.6
-1.2
-0.8
-0.4
-0.001
-2
-1
-2
0
0
0
0
Single nonrepetitive pulse
Common emitter
I C /I B = 30
Common emitter
V CE = −2 V
Single nonrepetitive
pulse
Collector−emitter voltage V
Base−emitter voltage V
Ta = 100°C
-0.4
Collector current I
Ta = 100°C
-0.01
-0.4
I B =− 1 mA
V
-0.8
I
CE (sat)
I
C
C
-20
– V
-0.1
– V
-0.8
CE
BE
Common emitter
Ta = 25°C
Single nonrepetitive pulse
25°C
-1.2
– I
−55°C
−55°C
25°C
C
C
BE
CE
(A)
-1.2
-1
-1.6
(V)
(V)
-10
-8
-3
-2
-5
-4
-6
-1.6
-10
-2
4
-0.01
-0.1
-10
-1
1000
100
-0.3
-0.1
300
-10
-0.1
30
10
-3
-1
-0.001
-0.001
*: Single nonrepetitive pulse
Note that the curves for 100 ms, 10 s and
DC operation will be different when the
devices aren’t mounted on an FR4 board
(glass-epoxy, 1.6 mm thick, Cu area: 645
mm
Single-device operation
These characteristic curves must be derated
linearly with increase in temperature.
I C max (continuous)*
DC operation
I C max (pulse) *
I C max (pulse) *
Ta = 25°C
Ta = 25°C
2
Common emitter
V CE = −2 V
Single nonrepetitive pulse
Common emitter
I C /I B = 30
Single nonrepetitive pulse
).
Collector−emitter voltage V
10 s*
-0.01
-0.01
Collector current I
Collector current I
Safe operating area
25°C
−55°C
-1
100 ms*
V
Ta = -55°C
BE (sat)
h
FE
-0.1
-0.1
25°C
– I
C
– I
100°C
Ta = 100°C
C
C
C
-10
(A)
(A)
CE
TPCP8902
-1
-1
2009-06-11
(V)
100μs*
10μs*
10 ms*
1 ms*
-10
-10
-100