gfb75n03 Greenray Industries Inc., gfb75n03 Datasheet - Page 2
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gfb75n03
Manufacturer Part Number
gfb75n03
Description
N-channel Enhancement-mode Mosfet Neral Semiconductor
Manufacturer
Greenray Industries Inc.
Datasheet
1.GFB75N03.pdf
(5 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
GFB75N03
Manufacturer:
GS
Quantity:
2 550
Electrical Characteristics
Parameter
Static
Drain-Source Breakdown Voltage
Drain-Source On-State Resistance
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
On-State Drain Current
Forward Transconductance
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Max. Diode Forward Current
Diode Forward Voltage
Note:
(1) Pulse test; pulse width
Test Circuit
Switching
V
GEN
R
300 s, duty cycle
G
(1)
V
(1)
IN
G
(1)
S
D
V
2%
DD
N-Channel Enhancement-Mode MOSFET
R
(T
D
J
Symbol
R
BV
V
= 25°C unless otherwise noted)
I
t
t
I
I
C
DS(on)
C
V
GS(th)
D(on)
Q
Q
C
d(on)
d(off)
DSS
GSS
Q
DUT
g
I
t
t
oss
rss
SD
DSS
iss
S
fs
gs
gd
r
f
g
V
OUT
V
V
DS
V
V
V
V
V
V
V
V
I
V
DS
V
GS
DS
D
I
GS
DS
DS
DD
DS
GS
=15V, I
S
GS
DS
Test Condition
= 38A, V
= V
= 15V, V
= ±20V, V
= 0V, I
= 30V, V
= 15V, R
= 15V, V
1A, V
= 4.5V, I
= 15V, I
f = 1.0MH
= 10V, I
Waveforms
R
I
Switching
5V, V
D
GS
G
D
= 38A
=38A, V
, I
= 6
–
GEN
D
D
GS
GS
GS
D
D
Output, V
= 250 A
D
GS
GS
L
= 250 A
DS
= 38A
= 38A
= 10V
Input, V
= 15
Z
= 31A
= 10V
= 0V
= 10V
= 0V
= 0V
= 0V
GS
=5V
t
d(on)
OUT
IN
10%
Min
1.0
30
75
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
t
on
50%
10%
t
PULSE WIDTH
r
90%
3240
32.5
GFB75N03
Typ
625
285
5.8
8.5
0.9
61
63
11
11
13
16
94
38
–
–
–
–
–
–
t
d(off)
±100
Max
132
6.5
9.5
3.0
1.0
1.3
50%
46
90
26
29
57
75
–
–
–
–
–
–
–
–
90%
t
off
10%
90 %
t
INVERTED
Unit
f
m
nC
nA
pF
ns
V
V
A
S
A
V
A