tpc8034-h TOSHIBA Semiconductor CORPORATION, tpc8034-h Datasheet - Page 5

• Manufacturer Part Number: tpc8034-h
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos?-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
1.6
1.2
0.8
0.4
10
−80
2
0
7
6
5
4
3
2
1
0.1
0
Common source
Pulse test
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
(2)
(1)
V GS = 4.5 V
−40
Drain-source voltage V
Ambient temperature Ta (
Ambient temperature Ta (
40
Capacitance – V
V GS = 10 V
0
1
R
DS (ON)
(1)Device mounted on a glass-epoxy
(2)Device mounted on a glass-epoxy
board(a) (Note 2a)
board(b) (Note 2b)
P
t = 10s
D
I D = 4.5A,9A,18A
40
80
– Ta
– Ta
80
DS
10
DS
I D = 4.5A,9A,18A
120
C iss
C oss
C rss
°
(V)
C)
120
°
C)
160
100
160
5
100
2.5
1.5
0.5
10
30
10
50
40
20
1
−80
0
3
2
1
0
0
0
V DS
Common source
V DS = 10 V
I D = 1 mA
Pulse test
Common source
I D = 18 A
Ta = 25°C
Pulse test
10
Common source
Ta = 25°C
Pulse test
Drain-source voltage V
−40
−0.2
Ambient temperature Ta (
Total gate charge Q
4.5
20
3
Dynamic input/output
0
characteristics
−0.4
I
DR
V
th
V DD = 6 V
– V
40
40
– Ta
1
DS
−0.6
24 V
80
g
DS
(nC)
60
V GS = 0 V
−0.8
°
(V)
120
C)
12 V
TPC8034-H
2008-02-13
−1
160
80
20
8
16
12
4
0