tpc8030 TOSHIBA Semiconductor CORPORATION, tpc8030 Datasheet - Page 2

• Manufacturer Part Number: tpc8030
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type U-mos Iv
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Thermal Characteristics
Marking
Note 1:
Thermal resistance, channel to ambient
(t = 10 s)
Thermal resistance, channel to ambient
(t = 10 s)
Note 2: (a) Device mounted on a glass-epoxy board (a)
Note 3: V
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5: • on lower left of the marking indicates Pin 1.
Ensure that the channel temperature does not exceed 150°C.
(Note 5)
※ Weekly code:
T P C 8 0 3 0
DD
= 24 V, T
Characteristics
(a)
ch
Week of manufacture
(01 for the first week of a year: sequential number up to 52 or 53)
Year of manufacture
(The last digit of a year)
= 25°C (initial), L = 0.2 mH, I
(Three digits)
Part No. (or abbreviation code)
Lot No.
A line indicates
Lead(Pb)-Free Finish
25.4 × 25.4 × 0.8
(Note 2a)
(Note 2b)
FR-4
(unit: mm)
R
R
Symbol
th (ch-a)
th (ch-a)
AR
2
= 11 A
Max
65.8
125
(b) Device mounted on a glass-epoxy board (b)
°C/W
°C/W
Unit
(b)
25.4 × 25.4 × 0.8
FR-4
(unit: mm)
2008-04-02
TPC8030