tpc8020-h TOSHIBA Semiconductor CORPORATION, tpc8020-h Datasheet - Page 4

• Manufacturer Part Number: tpc8020-h
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

100
0.1
10
20
16
12
10
8
6
4
2
0
8
4
0
1
0.1
0
0
10
Common source
V DS = 10 V
Pulse test
Drain-source voltage V
Gate-source voltage V
3.5
1
0.2
8
Ta = −55°C
3.2
Drain current I
6
5
4
2
1
100
0.4
⎪Y
3.1
I
I
D
D
fs
– V
– V
⎪ – I
3
100
Ta = −55°C
DS
GS
25
0.6
D
D
Common source
Ta = 25°C Pulse test
10
4
25
GS
DS
Common source
V DS = 10 V
Pulse test
(A)
V GS = 2.6V
0.8
(V)
(V)
5
2.9
2.8
3
100
1
6
4
0.16
0.12
0.08
0.04
100
0.2
20
16
12
10
8
4
0
0
1
0.1
0
0
10
Common source
Ta = 25°C
Pulse test
4.5
Drain-source voltage V
Gate-source voltage V
V GS = 10 V
3.5
0.4
2
8
5
Drain current I
6
4.5
4
1
R
0.8
V
DS (ON)
3.3
4
I
DS
D
– V
– V
DS
GS
– I
1.2
6
D
Common source
Ta = 25°C Pulse test
D
Common source
T a = 25 °C
Pulse test
10
GS
DS
(A)
V GS = 2.7V
I D = 13 A
1.6
(V)
(V)
8
TPC8020-H
6.5
3.3
3.1
2.9
3.2
3
2006-11-16
100
10
2