tpc8065-h TOSHIBA Semiconductor CORPORATION, tpc8065-h Datasheet - Page 3

• Manufacturer Part Number: tpc8065-h
• Description: Mosfets Silicon N-channel Mos U-mos?-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

6. 6. 6. 6. Electrical Characteristics
6.1.
6.1.
6.2.
6.2.
6.3.
6.3.
6.4.
6.4.
6.1.
6.1. Static Characteristics (T
6.2.
6.2. Dynamic Characteristics (T
6.3.
6.3. Gate Charge Characteristics (T
6.4.
6.4. Source-Drain Characteristics (T
Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Note 5: Ensure that the channel temperature does not exceed 150.
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Gate resistance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Total gate charge (gate-source plus
gate-drain)
Gate-source charge 1
Gate-drain charge
Gate switch charge
Pulsed reverse drain current
Diode forward voltage
Static Characteristics (T
Static Characteristics (T
Dynamic Characteristics (T
Dynamic Characteristics (T
Gate Charge Characteristics (T
Gate Charge Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (T
Static Characteristics (T
Dynamic Characteristics (T
Gate Charge Characteristics (T
Source-Drain Characteristics (T
Characteristics
Characteristics
Characteristics
Characteristics
(Note 5)
a a a a
Fig.
Fig.
Fig.
Fig. 6.2.1
= 25
= 25
= 25    unless otherwise specified)
= 25
V
V
R
Symbol
Symbol
Symbol
a a a a
(BR)DSS
(BR)DSX
Q
Q
I
I
DS(ON)
C
C
6.2.1
6.2.1
C
6.2.1 Switching Time Test Circuit
Q
GSS
DSS
V
t
t
Q
r
on
off
= 25
= 25
oss
t
t
gs1
SW
= 25
= 25    unless otherwise specified)
rss
iss
g
gd
th
r
f
Symbol
g
V
I
DRP
DSF
a a a a
a a a a
= 25
= 25
unless otherwise specified)
unless otherwise specified)
= 25    unless otherwise specified)
= 25
unless otherwise specified)
= 25
= 25
= 25    unless otherwise specified)
= 25
V
V
I
I
V
V
V
V
V
See Figure 6.2.1.
Switching Time Test Circuit
V
V
V
Switching Time Test Circuit
Switching Time Test Circuit
D
D
GS
DS
DS
GS
GS
DS
DS
DD
DD
DD
= 10 mA, V
= 10 mA, V
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)

I
= 30 V, V
= 10 V, I
= 10 V, V
= 10 V, V
DR
= ±20 V, V
= 4.5 V, I
= 10 V, I
3
24 V, V
24 V, V
24 V, V
= 13 A, V
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Test Condition
Test Condition
Test Condition
D
D
GS
GS
D
Test Condition
GS
GS
GS
GS
GS
GS
= 0.2 mA
= 6.5 A
DS
= 6.5 A
= 0 V
= -20 V
= 0 V
= 0 V, f = 1 MHz
= 0 V, f = 5 MHz
= 10 V, I
= 5 V, I
= 10 V, I
GS
= 0 V
= 0 V
D
D
D
= 13 A
= 13 A
= 13 A
Min
Min
Min
Min
1.3
1.0
30
15


















1350
Typ.
11.9
Typ.
Typ.
Typ.
240
9.6
1.4
2.1
8.0
2.4
9.9
4.4
2.1
4.3
63
19
20







TPC8065-H
2010-10-22
Max
±0.1
14.7
11.6
Max
Max
Max
-1.2
2.3
2.1
10














52
Rev.1.0
Unit
Unit
Unit
Unit
mΩ
µA
nC
pF
ns
Ω
V
A
V