tpc8013-h TOSHIBA Semiconductor CORPORATION, tpc8013-h Datasheet - Page 5

• Manufacturer Part Number: tpc8013-h
• Description: Silicon N Channel Mos Type High Speed U-mos Iii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
1.6
1.2
0.8
0.4
12
10
10
-80
8
6
4
2
0
2
0
0.1
0
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
(1)
(2)
V GS = 4.5 V
-40
Drain-source voltage V
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
50
10
Capacitance – V
0
1
R
DS (ON)
P
I D = 15, 7.5, 3.8
D
100
40
– Ta
t = 10 s
(1) Device mounted on a
(2) Device mounted on a
– Ta
glass-epoxy board (a)
(Note 2a)
glass-epoxy board (b)
(Note 2b)
80
10
DS
DS
I D = 15, 7.5, 3.8
Common source
Pulse test
150
(V)
120
C oss
C rss
C iss
160
100
200
5
100
0.1
2.5
1.5
0.5
10
40
30
20
10
-80
1
2
1
0
0
0
0
12
Common source
Ta = 25°C
I D = 15 A
Pulse test
6
Common source
V DS = 10 V
I D = 1 mA
Pulse test
10
V DD = 24 V
Dynamic input/output characteristics
-40
-0.2
10
V DS
Drain-source voltage V
Ambient temperature Ta (°C)
5
3
Total gate charge Q
20
0
-0.4
I
DR
V
1
th
12
– V
40
30
– Ta
DS
-0.6
g
V GS
6
80
40
DS
(nC)
Common source
Ta = 25°C
Pulse test
(V)
V GS = 0 V
-0.8
V DD = 24 V
TPC8013-H
120
50
2002-03-25
160
-1
60
16
12
10
8
6
4
2
0
14