tpc8208 TOSHIBA Semiconductor CORPORATION, tpc8208 Datasheet - Page 5

• Manufacturer Part Number: tpc8208
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type U-mosiii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
100
2.0
1.5
1.0
0.5
80
60
40
20
10
−80
0
0
0.1
0
(1)
(2)
(3)
(4)
V GS = 2.5 V
−40
Drain-source voltage V
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
50
Device mounted on a glass-epoxy board (a)
Device mounted on a glass-epoxy board (b)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
t = 10 s
Capacitance – V
0
1
R
4 V
DS (ON)
P
D
100
40
I D = 5 A
– Ta
– Ta
I D = 5 A, .2.5 A, 1.2A
80
10
DS
DS
Common source
Ta = 25°C
V GS = 0 V
f = 1 MHz
Common source
Pulse test
150
(V)
2.5 A, 1.2 A
C oss
C rss
C iss
120
(Note 2a)
(Note 2b)
160
100
200
5
100
0.1
1.4
1.2
1.0
0.8
0.6
0.4
0.2
10
20
16
12
−80
1
0
8
4
0
−0
0
4
V DD = 16 V
8
V DS
Dynamic input/output characteristics
−0.2
−40
5
Drain-source voltage V
Ambient temperature Ta (°C)
Total gate charge Q
5
3
−0.4
0
I
−0.6
DR
V
th
1
10
– V
40
– Ta
−0.8
DS
8
g
80
DS
Common source
Ta = 25°C
Pulse test
Common source
I D = 5 A
Ta = 25°C
Pulse test
V GS = 0 V
−1
Common source
V DS = 10 V
I D = 1 mA
Pulse test
(nC)
15
V DD = 16 V
(V)
4
120
−1.2
2006-11-16
TPC8208
−1.4
160
20
20
16
12
8
4
0