tpc8210 TOSHIBA Semiconductor CORPORATION, tpc8210 Datasheet - Page 2

• Manufacturer Part Number: tpc8210
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type U-mos Iii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Thermal Characteristics
Marking (Note 6)
Note 1:
Thermal resistance, channel to ambient
(t = 10 s)
Thermal resistance, channel to ambient
(t = 10 s)
Note 2:
Note 3:
Note 4: V
Note 5: Repetitive rating: pulse width limited by maximum channel temperature
Note 6: • on lower left of the marking indicates Pin 1.
a)
a) The power dissipation and thermal resistance values are shown for a single device.
b) The power dissipation and thermal resistance values are shown for a single device.
(During single-device operation, power is only applied to one device.)
(During dual operation, power is evenly applied to both devices.)
Device mounted on a glass-epoxy board (a)
Ensure that the channel temperature does not exceed 150°C.
※ Weekly code:
T P C 8 2 1 0
DD
= 24 V, T
(a)
Characteristics
ch
Week of manufacture
(01 for the first week of a year: sequential number to 52 or 53)
Year of manufacture
(The last digit of a year)
= 25°C (initial), L = 1.0 mH, R
(Note 2a) Single-device value at
(Note 2b) Single-device value at
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
(Three digits)
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Single-device operation
dual operation
Single-device operation
dual operation
(Note 3a)
(Note 3b)
(Note 3a)
(Note 3b)
G
2
b)
= 25 Ω, I
R
R
R
R
Device mounted on a glass-epoxy board (b)
th (ch-a) (1)
th (ch-a) (2)
th (ch-a) (1)
th (ch-a) (2)
Symbol
AR
= 8 A
(b)
Max
83.3
114
167
278
°C/W
Unit
FR-4
25.4 × 25.4 × 0.8
(unit: mm)
2007-01-16
TPC8210