tpc8406-h TOSHIBA Semiconductor CORPORATION, tpc8406-h Datasheet - Page 5

• Manufacturer Part Number: tpc8406-h
• Description: Toshiba Field Effect Transistor Silicon P/n-channel Mos Type P-channel?n-channel Ultra-high-speed U-mosiii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

P-Channel
100
−30
−25
−20
−15
−10
−10
0.1
10
−5
−8
−6
−4
−2
1
0
−0.1
0
0
0
Common source
V DS = −10 V
Pulse test
Common source
V DS = −10 V
Pulse test
−4.5
−6
−8
−10
Drain-source voltage V
Gate-source voltage V
−0.2
−1
Ta = −55°C
25
Drain current I
100
−1
−4
−0.4
−2
⎪Y
I
I
D
D
25
fs
– V
– V
−3.4
⎪ – I
DS
−3.2
GS
Ta = −55°C
−0.6
−3
D
−3
D
−10
GS
DS
100
(A)
Common source
Ta = 25°C
Pulse test
V GS = −2.4 V
−0.8
−4
(V)
(V)
−2.8
−2.7
−2.6
−2.5
−100
−1.0
−5
5
−0.5
−0.4
−0.3
−0.2
−0.1
300
100
−20
−16
−12
30
10
−8
−4
0
3
−0.1
0
0
0
Common source
Ta = 25°C
Pulse test
−4.5
−6
−8
−10
Drain-source voltage V
Gate-source voltage V
−2
−0.4
Drain current I
−4
−1
R
−4
−0.8
V
DS (ON)
I
DS
D
– V
−6
– V
V GS = −10 V
−3.4
−4.5 V
DS
GS
−1.2
– I
D
−3.2
D
−10
−8
GS
DS
(A)
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25℃
Pulse test
V GS = −2.4 V
I D = −6.5 A
−1.6
(V)
(V)
TPC8406-H
−10
−3.3
−1.7
2006-11-13
−3.0
−2.8
−2.6
−100
−12
−2