tpc8404 TOSHIBA Semiconductor CORPORATION, tpc8404 Datasheet - Page 9

• Manufacturer Part Number: tpc8404
• Description: Toshiba Field Effect Transistor Silicon P, N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

N-ch
10
100
2.0
1.5
1.0
0.5
10
−80
5
4
3
2
1
0
1
0.1
0
0
Common source
V GS = 10 V
Pulse test
Common source
V GS = 0 V
f = 1MHz
Ta= 25℃
(1)
(2)
(3)
(4)
−40
0.3
Drain-source voltage V
Device mounted on a glass-epoxy board (a)
Ambient temperature Ta (°C)
Case temperature Tc
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
50
Capacitance – V
Device mounted on a glass-epoxy board (b)
0
1
R
DS (ON)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual
P
D
operation (Note 3b)
t = 10 s
100
40
3
– Ta
– Tc
80
10
DS
DS
C iss
C rss
C oss
(°C)
150
(V)
I D = 3 A
120
30
(Note 2a)
(Note 2b)
I D = 1 A
160
100
200
9
300
200
100
0
100
0.1
10
−80
1
5
4
3
2
1
0
0
0
Common source
Tc = 25°C
Pulse test
Dynamic input/output characteristics
−0.2
−40
V
ＤＳ
Total gate charge Ｑｇ (ｎＣ）
Drain-source voltage V
Case temperature Tc
−0.4
5
5
3
0
V GS = 10 V
50
I
−0.6
DR
V
th
V
– V
40
ＧＳ
– Tc
100
−0.8
0, −1
DS
Common source
ID=1.1A
Tc=25℃
Pulse test
10
80
V
DS
ＤＳ
−1.0
Common source
V DS = 10 V
I D = 1 mA
Pulse test
=200V
(°C)
(V)
120
2006-12-27
TPC8404
−1.2
15
12
16
−1.4
20
4
160
25
8
0