tpc8a04-h TOSHIBA Semiconductor CORPORATION, tpc8a04-h Datasheet - Page 4

• Manufacturer Part Number: tpc8a04-h
• Description: Toshiba Field Effect Transistor With Built-in Schottky Barrier Diode Silicon N-channel Mos Type U-mos V-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
10,8,6,5,4.5,4
100
0.1
30
20
10
10
0
5
4
3
2
1
0
1
0.1
0
0
Common source
V DS = 10 V
Pulse test
Common source
V DS = 10 V
Pulse test
Drain-source voltage V
Gate-source voltage V
0.2
1
Drain current I
2.5
1
100
Ta = −55°C
0.4
2
⎪Y
I
I
D
D
fs
– V
– V
⎪ − I
DS
GS
Ta = −55°C
100
0.6
D
25
3
D
10
GS
DS
(A)
25
Common source
Ta = 25°C
Pulse test
V GS = 2.1 V
0.8
2.45
4
(V)
(V)
2.4
2.3
100
1.0
5
4
0.20
0.15
0.10
0.05
10,8,6,5,4.5,4
10
10
8
6
4
2
0
0
1
0.1
0
0
Common source
Ta = 25°C
Pulse test
Drain-source voltage V
Gate-source voltage V
0.4
2
Drain current I
1
R
0.8
V
DS (ON)
4
I
2.55
DS
D
V GS = 10 V
– V
– V
DS
4.5
GS
− I
1.2
6
D
D
10
GS
I D = 18 A
DS
(A)
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
4.5
9
V GS = 2.3 V
1.6
8
(V)
TPC8A04-H
(V)
2008-10-01
2.45
2.4
2.5
100
10
2