tpc8a05-h TOSHIBA Semiconductor CORPORATION, tpc8a05-h Datasheet - Page 5

• Manufacturer Part Number: tpc8a05-h
• Description: Toshiba Field Effect Transistor With Built-in Schottky Barrier Diode Silicon N-channel Mos Type U-mos V-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
2.0
1.5
1.0
0.5
10
24
20
16
12
8
4
0
−80
0.1
0
0
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
Common source
Pulse test
V GS = 4.5 V
(1)
(2)
−40
Drain-source voltage V
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
V GS = 10 V
40
Capacitance − V
0
1
R
DS (ON)
(1) Device mounted on a glass-epoxy
(2) Device mounted on a glass-epoxy
P
board (a) (Note 2a)
board (b) (Note 2b)
t = 10s
D
I D = 2.5, 5, 10A
80
40
– Ta
− Ta
80
DS
10
DS
I D = 2.5, 5, 10A
120
C oss
C iss
(V)
120
C rss
100
160
160
5
100
2.5
2.0
1.5
1.0
0.5
10
30
20
10
−80
1
0
0
0
0
Common source
I D = 10 A
Ta = 25°C
Pulse test
Common source
V DS = 10 V
I D = 1 mA
Pulse test
−40
Drain-source voltage V
Ambient temperature Ta (°C)
V DS
−0.2
Total gate charge Q
4
Dynamic input/output
10
0
characteristics
−0.4
V DD = 6 V
I
8
DR
V
th
3
− V
40
− Ta
24V
DS
−0.6
12
4.5
1
80
g
DS
Common source
Ta = 25°C
Pulse test
12V
(nC)
−0.8
16
TPC8A05-H
(V)
V GS = 0 V
120
2008-09-10
−1.0
160
20
12
8
4
0