ipb030n08n3 Infineon Technologies Corporation, ipb030n08n3 Datasheet - Page 2
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ipb030n08n3
Manufacturer Part Number
ipb030n08n3
Description
Optimos Tm 3 Power Transistor Power Mosfet
Manufacturer
Infineon Technologies Corporation
Datasheet
1.IPB030N08N3.pdf
(9 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ipb030n08n3 G
Manufacturer:
INFINEON
Quantity:
30 000
Part Number:
ipb030n08n3 G
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
ipb030n08n3G
Manufacturer:
INFINEON
Quantity:
12 500
Rev. 2.1
4)
connection. PCB is vertical in still air.
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
j
=25 °C, unless otherwise specified
Symbol Conditions
R
R
V
V
I
I
R
R
g
DSS
GSS
fs
(BR)DSS
GS(th)
thJC
thJA
DS(on)
G
minimal footprint
6 cm
V
V
V
T
V
T
V
V
V
|V
I
D
page 2
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=125 °C
=100 A
DS
=V
=80 V, V
=80 V, V
=0 V, I
=20 V, V
=10 V, I
=6 V, I
|>2|I
2
cooling area
GS
, I
D
2
|R
D
D
(one layer, 70 µm thick) copper area for drain
D
=1 mA
=50 A
D
=155 µA
GS
GS
DS
DS(on)max
=100 A
=0 V,
=0 V,
=0 V
4)
,
min.
80
79
2
-
-
-
-
-
-
-
-
-
Values
typ.
157
2.8
0.1
2.5
3.3
1.9
10
1
-
-
-
-
IPB030N08N3 G
max.
100
100
0.7
3.5
3.0
5.5
62
40
1
-
-
-
Unit
K/W
V
µA
nA
mΩ
Ω
S
2008-06-19