ipb030n08n3 Infineon Technologies Corporation, ipb030n08n3 Datasheet - Page 7

• Manufacturer Part Number: ipb030n08n3
• Description: Optimos Tm 3 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.1
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
1000
100
10
90
80
70
60
AV
1
0.1
-60
=f(T
); R
j
GS
); I
j(start)
-20
=25 Ω
D
=1 mA
1
20
t
T
AV
j
60
10
[°C]
[µs]
150 °C
100
100
100 °C
140
25 °C
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
12
10
V
8
6
4
2
0
g(th)
g s(th)
GS
0
gate
); I
DD
Q
D
=100 A pulsed
g s
Q
Q
gate
g
Q
50
[nC]
sw
Q
g d
IPB030N08N3 G
20 V
60 V
40 V
Q
g ate
2008-06-19
100