ipb023n06n3g Infineon Technologies Corporation, ipb023n06n3g Datasheet - Page 3

• Manufacturer Part Number: ipb023n06n3g
• Description: Optimos Tm 3 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.0
6)
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
See figure 16 for gate charge parameter definition
6)
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
Q
V
Q
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
plateau
SD
iss
oss
rss
gs
gd
sw
g
oss
rr
V
f =1 MHz
V
I
V
V
V
T
V
T
V
di
D
page 3
C
j
GS
DD
DD
GS
DD
GS
R
=100 A, R
=25 °C
F
=25 °C
=30 V, I
/dt =100 A/µs
=0 V, V
=30 V, V
=30 V, I
=0 to 10 V
=30 V, V
=0 V, I
F
F
DS
=100 A,
=100A ,
D
G
GS
GS
=100 A,
=3Ω
=30 V,
=10 V,
=0 V
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
12000
2600
typ.
149
120
120
5.1
0.9
87
31
90
62
23
62
13
38
69
-
-
IPB023N06N3 G
16000 pF
max.
198
160
140
560
1.2
-
-
-
-
-
-
-
-
-
-
-
-
Unit
ns
nC
V
nC
A
V
ns
nC
2008-12-11