ipb023n06n3g Infineon Technologies Corporation, ipb023n06n3g Datasheet - Page 5

• Manufacturer Part Number: ipb023n06n3g
• Description: Optimos Tm 3 Power Transistor Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Rev. 2.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
400
320
240
160
400
320
240
160
80
80
DS
GS
0
0
); T
0
0
); |V
10 V
j
=25 °C
j
GS
DS
8 V
|>2|I
1
6.5 V
2
D
|R
DS(on)max
4.5 V
6 V
5.5 V
175 °C
5 V
2
V
V
GS
DS
4
[V]
[V]
3
25 °C
6
4
page 5
5
8
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
320
280
240
200
160
120
80
40
D
=f(I
6
4
2
0
0
); T
0
0
D
j
); T
=25 °C
GS
5 V
j
=25 °C
100
100
5.5 V
I
I
D
D
200
200
[A]
[A]
IPB023N06N3 G
6 V
300
300
6.5 V
8 V
10 V
2008-12-11
400
400