fds7766s Fairchild Semiconductor, fds7766s Datasheet - Page 2

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fds7766s

Manufacturer Part Number
fds7766s
Description
30v N-channel Powertrench Mosfet
Manufacturer
Fairchild Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDS7766S
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
fds7766s-NL
Manufacturer:
NA
Quantity:
20 000
Notes:
surface of the drain pins. R
Scale 1 : 1 on letter size pape
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
t
Q
R
DSS
GSS
D(on)
d(on)
r
d(off)
f
S
rr
FS
BV
V
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
G
GS(th)
DSS
T
T
DSS
J
J
1. R
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Schottky Diode Reverse Recovery
JC
is guaranteed by design while R
Parameter
a) 50°C/W when
mounted on a 1in
pad of 2 oz copper
(Note 2)
(Note 2)
2
CA
is determined by the user's board design.
V
I
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
V
I
d
T
D
D
F
iF
A
GS
DS
GS
DS
GS
GS
GS
GS
DS
DS
GS
DD
GS
DS
GS
GS
= 17 A,
= 15 mA, Referenced to 25°C
= 15 mA, Referenced to 25°C
/d
= 25°C unless otherwise noted
= 24 V, V
= ±16 V, V
= V
= 4.5 V, I
= 10 V, I
= 15 V, V
= 15 V, I
= 0 V, I
= 10 V, I
= 10 V, I
= 10 V, V
= 15 mV, f = 1.0 MHz
= 15 V, I
= 10 V, R
= 5 V
= 0 V,
t
= 300 A/µs
Test Conditions
GS
b) 105°C/W when
, I
mounted on a .04 in
pad of 2 oz copper
D
D
= 1 mA
I
= 1 mA
D
D
D
D
S
D
D
GS
DS
DS
GS
= 17 A
= 15.5 A
= 17 A, T
GEN
= 17 A,
= 3.5 A
= 17 A
= 1 A,
= 0 V
= 5 V
= 0 V
= 0 V,
= 6
J
2
= 125°C
(Note 2)
(Note 2)
Min
30
30
1
Typ
4785
825
290
1.3
4.0
4.6
5.7
1.3
0.4
23
–2
91
12
12
82
30
41
11
27
28
c) 125°C/W when mounted
9
on a minimum pad.
Max Units
±100
500
132
5.5
6.5
7.2
3.5
0.7
22
22
49
58
3
FDS7766S Rev C (W)
mV/°C
mV/°C
m
nC
nC
nC
nC
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
A
S
A
V
A

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