fds7766s Fairchild Semiconductor, fds7766s Datasheet - Page 4

• Manufacturer Part Number: fds7766s
• Description: 30v N-channel Powertrench Mosfet
• Manufacturer: Fairchild Semiconductor

Typical Characteristics
0.01
100
0.1
10
10
8
6
4
2
0
1
Figure 9. Maximum Safe Operating Area.
0.01
0
Figure 7. Gate Charge Characteristics.
R
SINGLE PULSE
R
DS(ON)
0.001
I
JA
D
V
T
0.01
GS
A
0.1
= 17A
= 125
= 25
0.0001
1
= 10V
LIMIT
o
o
C
C/W
20
0.1
V
DS
D = 0.5
, DRAIN-SOURCE VOLTAGE (V)
0.2
0.1
0.05
Q
0.02
g
0.01
, GATE CHARGE (nC)
0.001
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
V
DC
SINGLE PULSE
DS
40
1
= 10V
10s
Figure 11. Transient Thermal Response Curve.
1s
15V
100ms
10ms
0.01
20V
1ms
10
60
100us
0.1
100
80
t
1
, TIME (sec)
6000
5000
4000
3000
2000
1000
50
40
30
20
10
0
0.001
1
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
C
rss
0.01
5
V
Power Dissipation.
10
DS
C
oss
, DRAIN TO SOURCE VOLTAGE (V)
0.1
10
t
1
, TIME (sec)
P(pk
Duty Cycle, D = t
T
R
R
J
15
100
1
- T
JA
JA
(t) = r(t) * R
t
1
A
= 125 °C/W
t
2
= P * R
C
20
10
iss
JA
1
JA
(t)
/ t
SINGLE PULSE
R
2
1000
JA
T
FDS7766S Rev C (W)
A
= 125°C/W
= 25°C
100
25
V
f = 1MHz
GS
= 0 V
1000
30