tpca8015-h TOSHIBA Semiconductor CORPORATION, tpca8015-h Datasheet - Page 4

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tpca8015-h

Manufacturer Part Number
tpca8015-h
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type Ultra-high-speed U-mosiii
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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1000
100
100
0.1
50
40
30
20
10
80
60
40
20
10
0
0
1
0.1
0
0
Common source
Common source
6
8
V
V
Pulse test
Pulse test
DS
DS
10
Drain-source voltage V
Gate-source voltage V
= 10 V
= 10 V
1
0.2
Drain current I
4.5
2
1
4
100
0.4
⎪Y
Ta = −55°C
I
I
D
3.6
D
fs
– V
– V
⎪ – I
3
3.2
DS
GS
Ta = −55°C
3.5
0.6
D
100
25
D
10
4
GS
DS
(A)
Common source
Ta = 25°C
Pulse test
V GS = 2.8V
0.8
25
(V)
(V)
5
3.4
3
100
1
6
4
100
100
0.8
0.6
0.4
0.2
80
60
40
20
10
0
1
1
0
0.1
0
0
10
Common source
6
Ta = 25°C
Pulse test
Drain-source voltage V
Gate-source voltage V
4.5
1
2
4
Drain current I
9
1
R
V
DS (ON)
2
4
I
DS
3.8
D
– V
– V
DS
GS
– I
3
6
D
3.7
D
10
GS
DS
(A)
Common source
4.5
Common source
V GS = 10 V
TPCA8015-H
Ta = 25°C
Pulse test
V GS = 2.8V
Ta = 25℃
Pulse test
4
(V)
(V)
8
I D = 35 A
18
2006-01-17
3.5
3.2
3.4
3
100
10
5

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