tpca8014-h TOSHIBA Semiconductor CORPORATION, tpca8014-h Datasheet - Page 5

• Manufacturer Part Number: tpca8014-h
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
20
16
12
50
40
30
20
10
10
8
4
0
0
−80
0.1
0
Common source
V GS = 0 V
f = 1 MHz
Ta = 25 °C
V DS
Common source
Pulse test
V GS = 4.5 V
−40
Drain-source voltage V
Total gate charge Q
Ambient temperature Ta (
10
Dynamic input/output
Capacitance – V
V GS
10
0
1
characteristics
R
DS (ON)
24
40
I D = 30 A
30
− Ta
Common source
I D = 30 A
Ta = 25 °C
Pulse test
15
80
10
20
g
DS
DS
V DD = 32 V
15
(nC)
7.5
(V)
120
°
C iss
C oss
C rss
C)
7.5
100
160
30
20
16
12
8
4
0
5
1000
100
0.1
2.0
1.5
1.0
0.5
10
1
0
−80
0
Common source
Ta = 25 °C
Pulse test
Common source
V DS = 10 V
I D = 1 mA
Pulse test
COMMON SOURCE
V DS = 10 V
I D = 1 mA
PULSE TEST
−40
Drain-source voltage V
Ambient temperature Ta (
−
0.2
0
10
−
I
0.4
DR
V
th
1
– V
40
– Ta
5
DS
−
0.6
80
TPCA8014-H
DS
3
V GS = 0 V
−
°
0.8
(V)
120
C)
2006-11-17
−
160
1.0