tpca8082 TOSHIBA Semiconductor CORPORATION, tpca8082 Datasheet
![no-image](/images/manufacturer_photos/0/6/670/toshiba_semiconductor_corporation_sml.jpg)
tpca8082
Manufacturer Part Number
tpca8082
Description
Mosfets Silicon N-channel Mos U-mos
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.TPCA8082.pdf
(9 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TPCA8082
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
MOSFETs Silicon N-Channel MOS (U-MOS)
TPCA8082
TPCA8082
1. 1. 1. 1. Applications
2. 2. 2. 2. Features
3. 3. 3. 3. Packaging and Internal Circuit
4. 4. 4. 4. Absolute Maximum Ratings (Note) (T
TPCA8082
TPCA8082
Applications
Applications
Features
Features
Packaging and Internal Circuit
Packaging and Internal Circuit
Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
Applications
Features
Packaging and Internal Circuit
Absolute Maximum Ratings (Note) (T
•
•
(1)
(2)
(3)
(4)
Note:
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Power dissipation
Power dissipation
Single-pulse avalanche energy
Avalanche current
Channel temperature
Storage temperature
Notebook PCs
Mobile Handsets
Small footprint due to a small and thin package
Low drain-source on-resistance: R
Low leakage current: I
Enhancement mode: V
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
SOP Advance
Characteristics
DSS
th
= 1.3 to 2.3 V (V
= 10 µA (max) (V
DS(ON)
(T
(t = 10 s)
(t = 10 s)
c
= 25)
= 2.9 mΩ (typ.) (V
DS
a a a a
DS
= 25
= 25
= 25
= 10 V, I
= 25 unless otherwise specified)
= 30 V)
1
D
(Note 1)
(Note 1)
(Note 2)
(Note 3)
(Note 4)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
= 0.5 mA)
GS
= 10 V)
Symbol
V
V
E
T
T
I
I
P
P
P
DSS
GSS
I
DP
AR
D
AS
stg
ch
D
D
D
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
-55 to 150
Rating
±20
133
150
2.8
1.6
30
32
96
45
32
TPCA8082
2010-06-29
Rev.1.0
Unit
mJ
W
W
W
V
A
A