tpca8030-h TOSHIBA Semiconductor CORPORATION, tpca8030-h Datasheet - Page 5

• Manufacturer Part Number: tpca8030-h
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos V-h
• Manufacturer: TOSHIBA Semiconductor CORPORATION

10000
1000
100
20
20
15
10
10
50
40
30
10
−80
0
5
0
0.1
0
Common source
I D = 24 A
Ta = 25°C
Pulse test
V DS = 24 V
12
Common source
Pulse test
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
6
V GS = 4.5 V
−40
Drain-source voltage V
Ambient temperature Ta (
5
Total gate charge Q
V GS = 10 V
Dynamic input/output
Capacitance – V
10
0
1
characteristics
R
DS (ON)
15
40
I D = 6,12,24 A
6
– Ta
V DD = 24 V
V GS
80
20
10
DS
g
DS
I D = 6,12,24 A
(nC)
12
C iss
C oss
°
C rss
(V)
C)
25
120
160
100
30
20
16
12
8
4
0
5
100
0.1
2.5
1.5
0.5
10
−80
1
3
2
1
0
0
Common source
V DS = 10 V
I D = 1 mA
Pulse test
−0.2
−40
10
Drain-source voltage V
Ambient temperature Ta (
4.5
−0.4
0
I
3
DR
V
1
th
−0.6
– V
40
– Ta
DS
−0.8
V GS = 0
80
Common source
Ta = 25°C
Pulse test
DS
TPCA8030-H
°
(V)
120
C)
−1
2008-06-20
−1.2
160
−