tpca8107-h TOSHIBA Semiconductor CORPORATION, tpca8107-h Datasheet - Page 6
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tpca8107-h
Manufacturer Part Number
tpca8107-h
Description
Toshiba Field Effect Transistor Silicon P-channel Mos Type Ultra-high-speed U-mosiii
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.TPCA8107-H.pdf
(7 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
−100
−0.1
−10
2.5
1.5
0.5
−1
3
2
1
0
−0.1
0
Curves must be derated
linearly with increase in
temperature
I D max (Pulse) *
I D max (Continuous)
* Single - pulse
Ta = 25°C
(1)
(2)
Drain-source voltage V
Ambient temperature Ta (
40
1000
100
Safe operating area
0.1
10
0.001
1
−1
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Tc=25℃
(1) Device mounted on a glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a glass-epoxy board (b)
(Note 2b)
DC Operation
t = 10s
P
Tc = 25°C
D
80
– Ta
0.01
V DSS max
−10
DS
t
120
=
1 ms *
°
(V)
10 ms *
C)
0.1
160
−100
Pulse width t
r
th
6
– t
1
w
w
(s)
50
40
30
20
10
0
0
10
Case temperature T
40
100
Single - pulse
P
D
80
(2)
(1)
(3)
– Tc
1000
C
120
TPCA8107-H
(
°
C)
2006-01-17
160