tpca8a10-h TOSHIBA Semiconductor CORPORATION, tpca8a10-h Datasheet
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tpca8a10-h
Manufacturer Part Number
tpca8a10-h
Description
Mosfets Silicon N-channel Mos U-mos-h/schottky Barrier Diode
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.TPCA8A10-H.pdf
(9 pages)
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TPCA8A10-H
Manufacturer:
TOSHIBA
Quantity:
12 000
MOSFETs Silicon N-Channel MOS (U-MOS-H/Schottky Barrier Diode)
TPCA8A10-H
TPCA8A10-H
1. 1. 1. 1. Applications
2. 2. 2. 2. Features
3. 3. 3. 3. Packaging and Internal Circuit
TPCA8A10-H
TPCA8A10-H
Applications
Applications
Features
Features
Packaging and Internal Circuit
Packaging and Internal Circuit
Applications
Features
Packaging and Internal Circuit
•
•
•
(1)
(2)
(3)
(4)
(5)
(6)
High-Efficiency DC-DC Converters
Notebook PCs
Mobile Handsets
Built-in a schottky barrier diode
Low forward voltage: V
High-speed switching
Small gate charge: Q
Low drain-source on-resistance: R
Low leakage current: I
Enhancement mode: V
SOP Advance
SW
DSS
th
DSF
= 12 nC (typ.)
= 1.3 to 2.3 V (V
= 100 µA (max) (V
= -0.6 V (max)
DS(ON)
= 2.9 mΩ (typ.) (V
DS
= 10 V, I
DS
1
= 30 V)
D
= 0.5 mA)
GS
= 4.5 V)
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
TPCA8A10-H
2011-06-19
Rev.1.0