nvtfs5811nl ON Semiconductor, nvtfs5811nl Datasheet

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nvtfs5811nl

Manufacturer Part Number
nvtfs5811nl
Description
Nvtfs5811nl Power Mosfet
Manufacturer
ON Semiconductor
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
nvtfs5811nlTAG
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
nvtfs5811nlTAG
Quantity:
4 500
NVTFS5811NL
Power MOSFET
40 V, 6.7 mW, 40 A, Single N−Channel
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The entire application environment impacts the thermal resistance values shown,
2. Psi (Y) is used as required per JESD51−12 for packages in which
3. Surface−mounted on FR4 board using a 650 mm
4. Continuous DC current rating. Maximum current for pulses as long as 1
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2011
January, 2011 − Rev. 0
THERMAL RESISTANCE MAXIMUM RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent R
2, 3, 4)
Power Dissipation
R
Continuous Drain Cur-
rent R
3, 4)
Power Dissipation
R
Pulsed Drain Current
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (T
I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Junction−to−Mounting Board (top) − Steady
State (Note 2 and 3)
Junction−to−Ambient − Steady State (Note 3)
L(pk)
AEC−Q101 Qualified Site and Change Controls
Small Footprint (3.3 x 3.3 mm) for Compact Design
Low R
Low Capacitance to Minimize Driver Losses
NV Prefix for Automotive and Other Applications Requiring
These are Pb−Free Devices
YJ−mb
qJA
they are not constants and are only valid for the particular conditions noted.
substantially less than 100% of the heat flows to single case surface.
second is higher but is dependent on pulse duration and duty cycle.
(Notes 1, 3)
= 36 A, L = 1.0 mH, R
YJ−mb
qJA
(Notes 1, 2, 3)
DS(on)
J
(Notes 1 &
= 25°C, V
(Notes 1,
to Minimize Conduction Losses
Parameter
Parameter
DD
(T
= 50 V, V
Steady
Steady
T
J
State
State
A
G
= 25°C unless otherwise noted)
= 25°C, t
= 25 W)
GS
T
T
T
T
T
T
mb
mb
T
T
mb
mb
A
A
= 10 V,
A
A
p
= 100°C
= 100°C
= 25°C
= 25°C
= 100°C
= 100°C
= 10 ms
= 25°C
= 25°C
Symbol
R
Symbol
T
2
R
YJ−mb
V
J
, 2 oz. Cu pad.
V
E
I
P
P
, T
DSS
DM
T
qJA
I
I
I
GS
AS
D
D
S
D
D
L
(Note 1)
stg
Value
−55 to
Value
+175
7.2
±20
354
260
47
3.2
1.6
40
40
28
21
10
16
17
65
11
1
°C/W
Unit
Unit
mJ
°C
°C
W
W
V
V
A
A
A
A
†For information on tape and reel specifications,
NVTFS5811NLTAG
NVTFS5811NLTWG
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
V
CASE 511AB
(BR)DSS
40 V
(Note: Microdot may be in either location)
WDFN8
(m8FL)
Device
ORDERING INFORMATION
5811
A
Y
WW
G
G (4)
1
http://onsemi.com
N−Channel MOSFET
6.7 mW @ 10 V
10 mW @ 4.5 V
R
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
D (5−8)
DS(on)
(Pb−Free)
(Pb−Free)
Package
MARKING DIAGRAM
WDFN8
WDFN8
Publication Order Number:
G
S
S
S
MAX
1
S (1,2,3)
AYWWG
5811
NVTFS5811NL/D
G
1500 / Tape &
5000 / Tape &
Shipping
I
D
Reel
Reel
40 A
MAX
D
D
D
D

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nvtfs5811nl Summary of contents

Page 1

... MARKING DIAGRAM 5811 S D AYWWG 5811 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION † Package Shipping WDFN8 1500 / Tape & (Pb−Free) Reel WDFN8 5000 / Tape & (Pb−Free) Reel Publication Order Number: NVTFS5811NL/D ...

Page 2

ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Drain−to−Source On Resistance Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate ...

Page 3

DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.016 0.014 0.012 0.010 0.008 0.006 ...

Page 4

C iss 1600 1400 1200 1000 800 600 400 C oss 200 C rss DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 1000 ...

Page 5

Duty Cycle = 0.5 0.2 10 0.1 0.05 0.02 1 0.01 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 TYPICAL CHARACTERISTICS 0.001 0.01 0.1 PULSE TIME (sec) Figure 13. Thermal Response http://onsemi.com 100 1000 ...

Page 6

... SOLDERING FOOTPRINT* 8X 0.42 0.65 4X PITCH 0.66 3.60 2.30 2.37 3.46 DIMENSION: MILLIMETERS ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NVTFS5811NL/D MAX 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.020 −−− 0.022 0.008 0.063 _ 12 ...

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