nvtfs5811nl ON Semiconductor, nvtfs5811nl Datasheet - Page 2
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nvtfs5811nl
Manufacturer Part Number
nvtfs5811nl
Description
Nvtfs5811nl Power Mosfet
Manufacturer
ON Semiconductor
Datasheet
1.NVTFS5811NL.pdf
(6 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
nvtfs5811nlTAG
Manufacturer:
ON/安森美
Quantity:
20 000
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 5)
CHARGES AND CAPACITANCES
DRAIN−SOURCE DIODE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 6)
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Parameter
(T
V
Symbol
V
Q
Q
R
Q
J
(BR)DSS
GS(TH)
t
t
I
I
C
G(TOT)
Q
Q
G(TOT)
Q
DS(on)
C
C
V
g
d(on)
d(off)
DSS
GSS
G(TH)
t
= 25°C unless otherwise noted)
RR
t
t
FS
oss
t
t
rss
GS
GD
SD
RR
iss
a
b
r
f
V
V
http://onsemi.com
GS
GS
V
V
V
V
GS
= 4.5 V, V
V
V
I
= 10 V, V
DS
GS
V
GS
V
S
V
GS
V
DS
I
V
GS
GS
D
V
GS
= 20 A
GS
= 0 V, dI
GS
= 40 V
= 0 V,
DS
= 0 V,
= 20 A, R
Test Condition
= 4.5 V, V
= 0 V, V
= V
= 0 V, f = 1.0 MHz,
= 0 V, I
= 4.5 V, I
= 10 V, I
2
V
R
= 5 V, I
I
DS
G
S
DS
DS
DS
= 2.5 W
= 20 A
S
, I
= 25 V
/dt = 100 A/ms,
GS
= 32 V, I
= 32 V, I
D
D
G
D
DS
= 250 mA
D
D
= 250 mA
= 2.5 W
= "20 V
= 10 A
= 20 A
= 20 A
= 32 V,
T
T
T
T
J
J
J
J
= 125°C
= 125°C
D
D
= 25°C
= 25°C
= 20 A,
= 20 A
Min
1.5
40
1570
24.6
0.83
0.70
Typ
215
157
5.8
8.8
17
30
11
55
20
40
22
12
10
17
1
5
9
"100
Max
1.0
2.2
6.7
1.2
10
10
Unit
mW
nC
nC
nC
nC
mA
nA
pF
ns
ns
V
V
S
V