nvtfs4824n ON Semiconductor, nvtfs4824n Datasheet

no-image

nvtfs4824n

Manufacturer Part Number
nvtfs4824n
Description
Nvtfs4824n Power Mosfet
Manufacturer
ON Semiconductor
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
nvtfs4824nTAG
Manufacturer:
ON Semiconductor
Quantity:
500
Part Number:
nvtfs4824nTAG
Manufacturer:
0N
Quantity:
20 000
Part Number:
nvtfs4824nTWG
Manufacturer:
ON Semiconductor
Quantity:
3 900
Part Number:
nvtfs4824nTWG
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
nvtfs4824nWFTAG
Manufacturer:
ON/安森美
Quantity:
20 000
NVTFS4824N
Power MOSFET
30 V, 4.7 mW, 46 A, Single N−Channel
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. The entire application environment impacts the thermal resistance values shown,
2. Psi (Y) is used as required per JESD51−12 for packages in which
3. Surface−mounted on FR4 board using a 650 mm
4. Maximum current for pulses as long as 1 second is higher but is dependent
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2011
July, 2011 − Rev. 0
THERMAL RESISTANCE MAXIMUM RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent R
2, 3, 4)
Power Dissipation
R
Continuous Drain Cur-
rent R
& 4)
Power Dissipation
R
Pulsed Drain Current
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (T
I
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
L(pk)
Junction−to−Mounting Board (top) − Steady
Junction−to−Ambient − Steady State (Note 3)
AEC−Q101 Qualified Site and Change Controls
Small Footprint (3.3 x 3.3 mm) for Compact Design
Low R
Low Capacitance to Minimize Driver Losses
NV Prefix for Automotive and Other Applications Requiring
These are Pb−Free Devices
YJ−mb
qJA
they are not constants and are only valid for the particular conditions noted.
substantially less than 100% of the heat flows to single case surface.
on pulse duration and duty cycle.
State (Notes 2 and 3)
(Notes 1, 3)
= 38 A, L = 0.1 mH, R
YJ−mb
qJA
(Notes 1, 2, 3)
DS(on)
(Notes 1, 3,
J
= 25°C, V
(Notes 1,
to Minimize Conduction Losses
Parameter
Parameter
DD
(T
= 50 V, V
Steady
Steady
T
J
State
State
A
G
= 25°C unless otherwise noted)
= 25°C, t
= 25 W)
GS
T
T
T
T
T
T
mb
mb
T
T
mb
mb
A
A
= 10 V,
A
A
p
= 100°C
= 100°C
= 25°C
= 25°C
= 100°C
= 100°C
= 10 ms
= 25°C
= 25°C
Symbol
R
Symbol
T
2
R
V
YJ−mb
, 2 oz. Cu pad.
J
V
E
I
P
P
, T
DSS
DM
T
qJA
I
I
I
GS
AS
D
D
S
D
D
L
(Note 1)
stg
Value
−55 to
Value
"20
18.2
12.8
7.2
402
175
260
47
3.2
1.6
30
46
33
21
21
72
11
1
°C/W
Unit
Unit
mJ
°C
°C
W
W
V
V
A
A
A
A
†For information on tape and reel specifications,
NVTFS4824NTAG
NVTFS4824NTWG
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
V
CASE 511AB
(BR)DSS
30 V
(Note: Microdot may be in either location)
Device
WDFN8
(m8FL)
G (4)
ORDERING INFORMATION
4824
A
Y
WW
G
1
http://onsemi.com
D (5 − 8)
7.5 mW @ 4.5 V
4.7 mW @ 10 V
R
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
N−Channel
DS(on)
(Pb−Free)
(Pb−Free)
Package
WDFN8
WDFN8
MARKING DIAGRAM
Publication Order Number:
G
S
S
S
MAX
1
S (1, 2, 3)
AYWWG
1500/Tape & Reel
5000/Tape & Reel
4824
NVTFS4824N/D
G
Shipping
I
D
46 A
MAX
D
D
D
D

Related parts for nvtfs4824n

nvtfs4824n Summary of contents

Page 1

... S ( MARKING DIAGRAM 4824 S D AYWWG 4824 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION † Package Shipping WDFN8 1500/Tape & Reel (Pb−Free) WDFN8 5000/Tape & Reel (Pb−Free) Publication Order Number: NVTFS4824N/D ...

Page 2

ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Drain−to−Source On Resistance Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate ...

Page 3

100 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.020 0.015 0.010 0.005 0.000 GATE−TO−SOURCE VOLTAGE (V) GS Figure ...

Page 4

C rss GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Capacitance Variation 1000 4 100 ...

Page 5

Duty Cycle = 0.5 0.2 1 0.1 0.05 0.02 0.1 0.01 Single Pulse 0.01 0.000001 0.00001 TYPICAL CHARACTERISTICS 0.0001 0.001 PULSE TIME (sec) Figure 13. Thermal Response http://onsemi.com 5 0.01 0.1 1 ...

Page 6

... SOLDERING FOOTPRINT* 8X 0.42 0.65 4X PITCH 0.66 3.60 2.30 2.37 3.46 DIMENSION: MILLIMETERS ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NVTFS4824N/D MAX 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.020 −−− 0.022 0.008 0.063 _ 12 ...

Related keywords